Photoacid Generators, Chemically Amplified Resist Compositions, and Patterning Process

专利摘要:
PURPOSE: A photoacid generator for a chemical amplification resist material containing the photoacid generator and a pattern formation method using the resist material are provided, to improve resolution, focus latitude and pattern profile shape after development and to reduce the variation in line widths and the deterioration in shapes even on long-term post-exposure bake. CONSTITUTION: The photoacid generator is represented by the formula 1, wherein R's are identical or different one another and are H, F, Cl, a nitro group or a linear, branched or cyclic and substituted or unsubstituted alkyl or alkoxy group of C1-C12; n is 0 or 1; m is 1 or 2; r is an integer of 0-4; r' is an integer of 0-5; k is an integer of 0-4; G' and G'' are S or -CH=CH-, respectively but G' and G'' are not S at the same time. The chemical amplification resist material comprises a resin whose solubility in an alkali developer changes by the action of an acid; and the photoacid generator of the formula 1.
公开号:KR20040002467A
申请号:KR1020030017699
申请日:2003-03-21
公开日:2004-01-07
发明作者:요우이찌 오사와；가쯔히로 고바야시；가쯔야 다께무라；준지 즈찌야；가즈노리 마에다
申请人:신에쓰 가가꾸 고교 가부시끼가이샤；
IPC主号:

专利说明:

Photoacid Generators, Chemically Amplified Resist Compositions, and Patterning Processes
[1] The present invention relates to a photoacid generator for chemically amplified resist materials used in chemically amplified resist materials for producing integrated circuits sensitive to radiation such as ultraviolet rays, far ultraviolet rays, electron beams, X-rays, excimer lasers, γ-rays, synchrotron radiation, and the like. It relates to a resist material containing the photoacid generator for the chemically amplified resist material and a pattern forming method using the same.
[2] Along with the high integration of LSIs and the miniaturization of pattern rules due to high speeds, far-infrared lithography is promising as a next-generation fine processing technology.
[3] In recent years, a technique using a high-brightness KrF excimer laser and an ArF excimer laser having a short wavelength as an ultraviolet light source has attracted attention, and a finer processing technique is desired by shortening the exposure light and increasing the resolution of the resist material.
[4] In view of this, recently developed acid-catalyzed chemically amplified resist materials have high sensitivity, resolution, dry etching resistance, and excellent characteristics, and are particularly promising resist materials for far ultraviolet lithography. This chemically amplified resist material has a positive type in which the exposed part is removed and the unexposed part remains, and a negative type in which the exposed part remains and the unexposed part is removed.
[5] In a chemically amplified positive resist material using an alkaline developer, a resin and / or compound in which a part or all of an alkali-soluble phenol or carboxylic acid is protected by an acid labile protecting group (acid labile group) is catalyzed by an acid produced by exposure. It decomposes | disassembled automatically, and a phenol or carboxylic acid is generate | occur | produced in an exposure part, and an exposure part is removed with alkaline developing solution. Moreover, in the same negative resist material, the resin (or) compound which has alkali-soluble phenol or carboxylic acid, and the compound (acid crosslinking agent) which can couple | crosslink (crosslink) the said resin or compound with acid generate | occur | produced by exposure. By crosslinking with acid, the exposed portion is insolubilized in the alkaline developer, and the unexposed portion is removed with the alkaline developer.
[6] The chemically amplified positive resist material is a resin having an acid labile group as a binder and a resist solution in which an acid-generating compound (hereinafter referred to as a photoacid generator) is dissolved in a solvent to prepare a resist solution. It is applied in two ways, heated as necessary, and the solvent is removed to form a resist film. Subsequently, exposure to radiation, for example, ultraviolet light is performed through a predetermined mask pattern on the resist film as a light source. Further, if necessary, a positive pattern profile is obtained by performing post exposure bake (PEB) to advance the catalytic reaction with acid, and developing with an aqueous alkali solution to remove the resist film of the exposed portion. . After etching the substrate by various methods, the remaining resist film is removed by dissolution or ashing with a stripping solution to form a pattern profile on the substrate.
[7] As a chemically amplified positive resist material for a KrF excimer laser, a phenol-based resin, for example, a resin in which part or all of hydrogen atoms of a phenolic hydroxyl group of polyhydroxystyrene is protected with an acid labile protecting group is used. Examples of iodonium salts, sulfonium salts, bissulfonyldiazomethanes, N-sulfonyloxydicarboxyimide compounds, and O-arylsulfonyl oxime compounds have been used. Further, if necessary, a dissolution inhibiting / promoting compound in which some or all of the hydrogen atoms of carboxylic acids and / or phenolic hydroxyl groups such as carboxylic acids and / or phenol derivatives having a molecular weight of 3,000 or less are protected by an acid labile Carboxylic acid compounds for improving properties, basic compounds for improving contrast, surfactants for improving applicability, and the like are added.
[8] Here, the O-arylsulfonyl oxime compound of the photoacid generator as shown below is excellent in sensitivity and resolution, and the compatibility with resins as seen in the sulfonium salt or the iodonium salt-based photoacid generator is deteriorated or Since there is no decrease in solubility in the resist solvent, it is preferably used as a photoacid generator of a chemically amplified resist material, particularly a chemically amplified positive resist material using KrF excimer laser (Patent Documents 1 to 9: US Patent No. 6004724, US Patent). 6,626,381, Japanese Patent Laid-Open No. 9-95479, Japanese Patent Laid-Open No. 9-208554, Japanese Patent Laid-Open No. 9-230588, Japanese Patent No. 2906999, Japanese Laid-Open Patent 9 -301948, Japanese Patent Laid-Open No. 2000-314956, and Japanese Patent Laid-Open No. 2001-233842.
[9]
[10] However, with the miniaturization of the required pattern size, problems such as low resolution and low environmental stability have arisen even when these photoacid generators are used.
[11] In this case, regarding the resolution, the acid labile group of the resin to be used is more easily broken with respect to the acid, or improved with basic additives and process conditions.
[12] There are two major environmental stability. One problem is that the acid generated by exposure is deactivated with a base in the air on the resist film or a base on the substrate under the resist film. This is a phenomenon often seen when using a acid generator that generates an acid having a high acid strength. This problem is a tendency to solve by making the acid labile group of the resin to be used easily broken with respect to acid, or by lowering the acid strength of generated acid. In addition, the problem of environmental stability is that acid generated in the resist film is diffused in the resist film when the exposure and post-exposure baking (PEB: post exposure bake) lasts long (PED: post exposure de1ay). In the case of acid deactivation and acid instability, the acid decomposition reaction proceeds and the pattern profile is often changed. For example, in the case of a chemically amplified positive resist material having an acid labile centered on acetal, the line width of the unexposed portion is often thinned.
[13] As described above, in order to obtain higher resolution, it is necessary to introduce an acid labile group which is easily broken by the resin, and as a photoacid generator, generation of an acid having low diffusibility is required. Alkyl sulfonic acid is examined in various ways as this low-diffusion acid. These alkylsulfonic acids include 10-camphorsulfonic acid, butanesulfonic acid, and octasulfonic acid, all of which are weak against the acid strengths of alkyl fluorides and arylsulfonic acids that have been used in the past, and the weakness of acid strengths must be covered by the amount of acid. In addition, more acid must be generated, and productivity is often lowered in connection with an increase in exposure time.
[14] Japanese Unexamined Patent Application Publication No. 2001-122850 (Patent Document 10) exemplifies sulfonium salts and iodonium salts that generate tosyloxybenzenesulfonic acid as an acid by exposure, and Japanese Unexamined Patent Application Publication No. 2001-55373 ( Patent Document 11) exemplifies tosyloxybenzenesulfonyldiazomethane. However, the former has disadvantages of using onium salts (roughness of the sidewalls of the pattern), and the latter has disadvantages of difficulty in synthesis.
[15] <Patent Document 1>
[16] US Patent No. 6004724
[17] <Patent Document 2>
[18] U.S. Pat.No.6261738
[19] <Patent Document 3>
[20] Japanese Patent Laid-Open No. 9-95479
[21] <Patent Document 4>
[22] Japanese Patent Laid-Open No. 9-208554
[23] <Patent Document 5>
[24] Japanese Patent Laid-Open No. 9-230588
[25] <Patent Document 6>
[26] Japanese Patent No. 2906999
[27] <Patent Document 7>
[28] Japanese Patent Laid-Open No. 9-301948
[29] <Patent Document 8>
[30] Japanese Patent Laid-Open No. 2000-314956
[31] <Patent Document 9>
[32] Japanese Patent Laid-Open No. 2001-233842
[33] <Patent Document 10>
[34] Japanese Patent Laid-Open No. 2001-122850
[35] <Patent Document 11>
[36] Japanese Patent Laid-Open No. 2001-55373
[37] As a photoacid generator of a resist material, the solubility (compatibility) with respect to a resist solvent and resin is high enough, the storage stability is good, there is no toxicity, the coating property is good, the pattern profile shape, PED stability, high resolution Although a wider depth of focus and better sensitivity are required, conventional photoacid generators, in particular O-arylsulfonyl oxime compound-based photoacid generators, do not satisfy all of these.
[38] In recent years, with the miniaturization of integrated circuit patterns, problems of resolution and depth of focus have become more severe.
[39] SUMMARY OF THE INVENTION An object of the present invention is to provide a photoacid generator for a chemically amplified resist material which provides a chemically amplified resist material having a particularly excellent pattern profile shape and focus depth while solving the above problems, and a resist material and a method for forming the pattern using the same. .
[40] MEANS TO SOLVE THE PROBLEM The present inventors earnestly examined in order to achieve the said objective, As a result, it is O-arylsulfonyl oxime compound which produces | generates the arylsulfonyloxyaryl sulfonic acid represented by following formula (1d) by exposure as a photo-acid generator, especially Formula 1 or Formula 1a. By using a resist material containing an O-arylsulfonyl oxime compound represented by 1b, 1b, or 1c, it is excellent in solubility, storage stability, and applicability, and there is little line width fluctuation and shape deterioration even after PED is extended for a long time. It has been found that the pattern profile shape is excellent, has a high resolution and a wide depth of focus suitable for microfabrication, and exhibits great power, especially in far ultraviolet lithography.
[41] In particular, an O-arylsulfonyl oxime compound which generates the sulfonic acid of Formula 1d by exposure with a photoacid generator such as a chemically amplified resist material using a resin whose solubility in an alkaline developer is changed by the action of an acid, in particular, Formula 1 or Formula 1a. By using the O-arylsulfonyl oxime compounds represented by the formulas 1b and 1c, it was found that the above-described effects were excellent, and in particular, in the ultraviolet ray lithography, a great power was exhibited, thereby completing the present invention.
[42] Accordingly, the present invention provides a photoacid generator for a chemically amplified resist material, a resist material and a pattern forming method using the same.
[43] Claim 1:
[44] A photoacid generator for a chemically amplified resist material represented by the following formula (1).
[45] <Formula 1>
[46]
[47] In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, k is an integer from 0 to 4, G' and G '' are sulfur atoms, respectively Or -CH = CH-, but at the same time does not represent a sulfur atom.
[48] Claim 2:
[49] A photoacid generator for a chemically amplified resist material represented by the following general formula (1a).
[50]
[51] In formula, R may be same or different, and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or an alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, EWG is a cyano group, a nitro group, or a perfluoroalkyl group having 1 to 3 carbon atoms P represents a linear, branched or cyclic substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.
[52] Claim 3:
[53] A photoacid generator for a chemically amplified resist material represented by the following general formula (1b).
[54]
[55] In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, EWG is a cyano group, a nitro group, or a perfluoroalkyl group having 1 to 3 carbon atoms Q represents a linear, branched or cyclic substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, or a substituted or unsubstituted arylene group having 6 to 18 carbon atoms.
[56] Claim 4:
[57] A photoacid generator for a chemically amplified resist material represented by the following formula (1c).
[58]
[59] In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, G is a hydrogen atom, linear, branched or cyclic substitution of 1 to 10 carbon atoms Alternatively, an unsubstituted alkyl group, a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, or two G's may be bonded to each other to form a ring structure with the carbon atom to which these G bonds.
[60] Claim 5:
[61] As an O-arylsulfonyl oxime compound, a chemically amplified resist material which generates arylsulfonyloxyarylsulfonic acid represented by the following general formula (1d) by ultraviolet rays, deep ultraviolet rays, electron beams, X-rays, excimer lasers, γ-rays, or synchrotron irradiation. Dragon mine generator.
[62]
[63] In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer of 0-4, r 'is an integer of 0-5.
[64] Claim 6:
[65] (A) a resin whose solubility in an alkaline developer is changed by the action of an acid,
[66] (B) The photoacid generator according to any one of claims 1 to 5.
[67] Chemically amplified resist material comprising a.
[68] Claim 7:
[69] (A) a resin whose solubility in an alkaline developer is changed by the action of an acid,
[70] (B) The photoacid generator according to any one of claims 1 to 5.
[71] A chemically amplified positive resist material comprising a.
[72] Claim 8:
[73] The resist material of Claim 6 or 7 which further contains the compound which generate | occur | produces an acid by irradiation other than the said (B) component.
[74] Claim 9:
[75] The resist material according to any one of claims 6 to 8, wherein the resin of component (A) is a resin having a substituent in which the solubility in an alkaline developer is changed by cleaving a C-O-C bond by the action of an acid.
[76] Claim 10:
[77] The resin of component (A) is substituted with the ratio of the average of more than 0 mol% and 80 mol% or less of the whole hydrogen atom of a phenolic hydroxyl group by 1 type, or 2 or more types of acid labile groups of the hydrogen atom of a phenolic hydroxyl group. A resist material which is a high molecular weight compound having a weight average molecular weight of 3,000 to 100,000.
[78] Claim 11:
[79] 10. The polymer compound according to claim 9, wherein the resin of component (A) has a repeating unit represented by the following general formula (2a), wherein a part of hydrogen atoms of the phenolic hydroxyl group in the polymer compound is selected from one or two or more acid labile groups. A polymer having a weight average molecular weight of 3,000 to 100) 000 comprising a partially substituted unit and a unit containing an acid labile group is substituted at an average of more than 0 mol% and 80 mol% or less with respect to the entire resin of component (A). A resist material that is a compound.
[80]
[81] In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, x is 0 or a positive integer, y is a positive integer, and x + It is a number which satisfy | fills y <= ⁵ , R <^6> represents an acid labile group, S and T represent a positive integer, and it is a number which satisfy | fills 0 <T / (S + T) <= 0.8.
[82] Claim 12:
[83] 10. The polymer compound according to claim 9, wherein the resin of component (A) is a polymer compound having a repeating unit represented by the following formula (2aa), wherein a unit based on acrylate ester and methacrylic acid ester in the polymer compound is a repetition of the resin of component (A). The ratio of the average of 0 mol% or more and 50 mol% or less with respect to the whole unit, and the unit containing an acid labile group with respect to the whole repeating unit of resin of (A) component are more than 0 mol% and 80 mol% or less on average A resist material which is a high molecular weight compound having a weight average molecular weight of 3,000 to 100,000 substituted with.
[84]
[85] In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, R ⁶ represents an acid labile group, and R ^6a is a hydrogen atom or an acid labile group, At least a portion is an acid labile, x is zero or a positive integer, y is a positive integer, a number satisfying x + y ≦ 5, M, N is a positive integer, and L is 0 or a positive integer And 0 <N / (M + N + L) ≦ 0.5 and 0 <(N + L) / (M + N + L) ≦ 0.8.
[86] Claim 13:
[87] The polymer of claim 9, wherein the resin of component (A) is a polymer compound having a repeating unit represented by the following formula (2ab), wherein a unit based on indene and / or substituted indene in the polymer compound is a repetition of the resin of component (A). The ratio of the average of 0 mol% or more and 50 mol% or less with respect to the whole unit, and the unit containing an acid labile group with respect to the whole repeating unit of resin of (A) component are more than 0 mol% and 80 mol% or less on average A resist material which is a high molecular weight compound having a weight average molecular weight of 3,000 to 100,000 substituted with.
[88]
[89] In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, R ⁶ represents an acid labile group, and R ^6a is a hydrogen atom or an acid labile group, At least a portion is an acid labile, x is zero or a positive integer, y is a positive integer, a number satisfying x + y≤5, yy is 0 or a positive integer, and satisfies x + yy≤4 A, B are positive integers, C, D, E are zero or positive integers, 0 <(B + E) / (A + B + C + D + E) ≤0.5 and 0 < It is a number satisfying (C + D + E) / (A + B + C + D + E) ≦ 0.8.
[90] Claim 14:
[91] According to any one of claims 10 to 13, wherein the acid labile group is a group represented by the following formula 4-7, a C4-20 tertiary alkyl group, trialkylsilyl group having 1 to 6 carbon atoms each, The resist material which is a C4-C20 oxoalkyl group or a C7-C20 aryl group substituted alkyl group.
[92]
[93]
[94]
[95]
[96] In the formula, R ¹⁰ and R ¹¹ represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, R ¹² represents a monovalent hydrocarbon group which may have a hetero atom having 1 to 18 carbon atoms, and R ¹⁰ And R ¹¹ , R ¹⁰ and R ¹² , R ¹¹ and R ¹² may form a ring, and in the case of forming a ring, R ¹⁰ , R ¹¹ and R ¹² may each be linear or branched having 1 to 18 carbon atoms. An alkylene group,
[97] R ¹³ is a C4-20 tertiary alkyl group, each alkyl group is a trialkylsilyl group having 1 to 6 carbon atoms, an oxoalkyl group having 4 to 20 carbon atoms, or a group represented by Formula 4, and z is an integer of 0 to 6 ego,
[98] R ¹⁴ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an aryl group which may be substituted with 6 to 20 carbon atoms, h is 0 or 1, i is any one of 0, 1, 2, 3 , 2h + i = 2 or 3,
[99] R ¹⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an optionally substituted aryl group having 6 to 20 carbon atoms, and R ¹⁶ to R ²⁵ each independently represent a hydrogen atom or a hetero atom having 1 to 15 carbon atoms. It represents the monovalent hydrocarbon group which may be included, and R <^16> -R <^25> may form a ring with each other, In that case, it shows the bivalent hydrocarbon group which may contain a C1-C15 hetero atom, and also R <^16> -R ²⁵ is a thing which couple | bonds with adjacent carbon, and couple | bonds without intervening and may form a double bond.
[100] Claim 15:
[101] The resist material according to any one of claims 6 to 14, further comprising (D) a basic compound.
[102] Claim 16:
[103] The resist material according to any one of claims 6 to 15, further comprising (E) an organic acid derivative.
[104] Claim 17:
[105] The resist material according to any one of claims 6 to 16, comprising propylene glycol alkyl ether acetate and / or lactic acid alkyl ester as a component of the solvent.
[106] Claim 18:
[107] (i) applying the resist material according to any one of claims 6 to 17 on a substrate,
[108] (ii) subsequent heat treatment followed by exposure to high energy or electron beams having a wavelength of 300 nm or less through a photomask;
[109] (iii) process of developing using a developing solution after heat treatment as necessary;
[110] Pattern forming method comprising a.
[111] Hereinafter, the present invention will be described in more detail.
[112] The present invention firstly provides a photoacid generator for a chemically amplified resist material having an arylsulfonyloxyarylsulfonyl group represented by the following general formula (1) or (1a, 1b, 1c).
[113] <Formula 1>
[114]
[115] In the formula, R, n, m, r, r ', k, G', and G '' are the same as above.
[116] <Formula 1a>
[117]
[118] In formula, R, n, m, r, r ', EWG, p are the same as the above.
[119] <Formula 1b>
[120]
[121] In formula, R, n, m, r, r ', EWG, q are the same as the above.
[122] <Formula 1c>
[123]
[124] In formula, R, n, m, r, r ', G are the same as the above.
[125] In Formula 1 or Formulas 1a, 1b, and 1c, R may be the same or different, and a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, a linear, branched or cyclic, substituted or unsubstituted carbon atom of 1 to 12 carbon atoms. An alkyl group or an alkoxy group of a ring is shown and specifically, a hydrogen atom, a methyl group, an ethyl group, n-propyl group, sec-propyl group, cyclopropyl group, n-butyl group, sec-butyl group, iso-butyl group, tert-butyl group , Methoxy group, ethoxy group, n-propyloxy group, sec-propyloxy group, n-butyloxy group, sec-butyloxy group, iso-butyloxy group, tert-butyloxy group, n-hexyl group, n- Hexyloxy group, n-octyl group, n-octyloxy group, n-decyl group, n-decyloxy group, n-dodecyl group, n-dodecyloxy group, etc. are mentioned. Especially, a hydrogen atom, a methyl group, an ethyl group, n-hexyloxy group, n-octyloxy group is used preferably, and a hydrogen atom and a methyl group are used more preferable. n is 0 or 1 and m is 1 or 2. r is an integer of 0-4, r 'is an integer of 0-5. The substitution position of the arylsulfonyloxy group in an arylsulfonyl group may be anywhere, and is not restrict | limited. As a preferable example, 4-position is preferable when an arylsulfonyl group is a benzenesulfonyl group, and when it is a naphthalenesulfonyl group, it differs in 1-naphthalenesulfonyl group and 2-naphthalenesulfonyl group, but in the case of 1-naphthalenesulfonyl group 4-position or 5-position or 8-position is preferable, and in the case of 2-naphthalenesulfonyl group, 6-position is preferable.
[126] More specifically, as the (arylsulfonyloxy) arylsulfonyloxy group, 4- (4'-toluenesulfonyloxy) benzenesulfonyloxy group, 4- (benzenesulfonyloxy) benzenesulfonyloxy group, 4- (4'- Methoxybenzenesulfonyloxy) benzenesulfonyloxy group, 4- (4'-fluorobenzenesulfonyloxy) benzenesulfonyloxy group, 4- (4'-trifluoromethylbenzenesulfonyloxy) benzenesulfonyloxy group, 4- (pentafluorobenzenesulfonyloxy) benzenesulfonyloxy group, 4- (2-naphthalenesulfonyloxy) benzenesulfonyloxy group, 3-methoxy-4- (4'-toluenesulfonyloxy) benzenesulfonyljade 3-methyl-4- (4'-toluenesulfonyloxy group) benzenesulfonyloxy group, 2- (4'-toluenesulfonyloxy) naphthalene-6-sulfonyloxy group, 1- (4'-toluenesulfonyl Oxy) naphthalene-4-sulfonyloxy group, 1- (4'-toluenesulfonyloxy) naphthalene-8-sulfonyloxy group, 2,5-bis (4'-toluenesulfonyloxy) benzenesulfonyloxy group, 2, 5-bis (4'-methoxybenzenesulfonyloxy) benzenesulfonyloxy group, etc. Although it is mentioned, it is not limited to this.
[127] Although it does not restrict | limit especially as an oxime skeleton of the O-arylsulfonyl oxime compound of the said Formula (1), 1a, 1b, 1c, The oxime structure of a well-known O-alkylsulfonyl oxime compound and O-arylsulfonyl oxime compound is mentioned. In particular, the above-mentioned known documents (Patent Documents 1 to 9: U.S. Patent No. 6004724, U.S. Patent 66263838, Japanese Patent Application Laid-Open No. 9-95479, Japanese Patent Application Laid-Open No. 9-208554, and Japanese Patent Publication) (Ox) 9-230588, Japanese Patent No. 2906999, Japanese Patent Laid-Open No. 9-301948, Japanese Patent Laid-Open No. 2000-314956 and Japanese Patent Laid-Open No. 2001-233842. Is preferred.
[128] In particular, as described in US Patent No. 6004724 (Patent Document 1), an oxime compound obtained by reacting a substituted phenylacetonitrile compound with 2-nitrothiophene or nitrobenzene under basic conditions in an alcohol solvent is preferable.
[129] In this case, although the geometric isomer exists in the compound using said 2-nitrothiophene, the compound obtained from the measurement result, such as a nuclear magnetic resonance spectrum, is a single product.
[130]
[131] Although the specificity of the structure has not been reached, it is preferable to use the oxime compound synthesized by the above formulation in the following raw materials.
[132] In the oxime skeleton of the formula (1), R is the same as the above meaning, and the substitution position is not particularly limited, but preferably used has a methyl group at the 2-position of the phenyl group.
[133] In Formula 1a, EWG represents a cyano group, a nitro group, or a perfluoroalkyl group having 1 to 3 carbon atoms, and specific examples thereof include trifluoromethyl group, perfluoroethyl group, and perfluoro-n-propyl group. More preferably, they are a cyano group and a trifluoromethyl group.
[134] p represents a linear, branched or cyclic substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, and more specifically cyclopentyl group, cyclohexyl group, phenyl group, 4 -Methoxyphenyl group, 3,4-dimethoxyphenyl group, 4-methylthiophenyl group, 2-methylphenyl group, 4-methylphenyl group, 4-phenoxyphenyl group, etc. are mentioned, Among these, a phenyl group, 4-methoxyphenyl group, 2-methylphenyl group, 4-methylphenyl group, 4-phenoxyphenyl are used preferably.
[135] In Formula 1b, EWG is the same as described for Formula 1a, q is a linear, branched or cyclic substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, or substituted or unsubstituted aryl having 6 to 18 carbon atoms. The group represented by a lene group and a 1, 4- phenylene group, a 1, 3- phenylene group, and the following general formula are mentioned more specifically.
[136]
[137] G represents a hydrogen atom, a linear, branched or cyclic substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms. Alternatively, two Gs may be bonded to each other to form a ring structure of preferably 4 to 10, in particular 6-membered ring together with the carbon atoms to which these G are bonded. More specifically, a hydrogen atom, a methyl group, an ethyl group, n-propyl group, n-butyl group, a phenyl group, 4-methylphenyl group, 4-methoxyphenyl group, 1,2-cyclohexylene group, etc. are mentioned, Especially, Methyl groups are preferably used.
[138] In addition, according to the second aspect of the present invention, in the O-arylsulfonyl oxime compound, arylsulfonyloxy represented by the following general formula (1d) by ultraviolet rays, deep ultraviolet rays, electron beams, X rays, excimer lasers, γ rays, and synchrotron irradiation. A photoacid generator for chemically amplified resist materials generating arylsulfonic acid is provided.
[139] <Formula 1d>
[140]
[141] In the formula, R, n, m, r, r 'are the same as above.
[142] Although it does not restrict | limit especially as an O-sulfonyl oxime compound which produces the sulfonic acid of the said Formula (1d), The oxime structure of a well-known O-alkylsulfonyl oxime compound and an O-arylsulfonyl oxime compound is mentioned, Especially the well-known document mentioned above (Patent Documents 1 to 9: U.S. Patent No. 6004724, U.S. Patent No. 6261738, Japanese Patent Laid-Open No. 9-95479, Japanese Patent Laid-Open No. 9-208554, Japanese Patent Laid-Open No. 9-230588 The oxime structure of the compound of Unexamined-Japanese-Patent No. 2906999, Unexamined-Japanese-Patent No. 9-301948, Unexamined-Japanese-Patent No. 2000-314956, and Unexamined-Japanese-Patent No. 2001-233842 is preferable.
[143] When the said photo-acid generator specifically illustrates the aryl sulfonyloxy aryl sulfonic acid which arises by exposure, More specifically, as (aryl sulfonyloxy) aryl sulfonic acid, 4- (4'-toluene sulfonyloxy) benzene sulfonic acid, 4 -(Benzenesulfonyloxy) benzenesulfonic acid, 4- (4'-methoxybenzenesulfonyloxy) benzenesulfonic acid, 4- (4'-fluorobenzenesulfonyloxy) benzenesulfonic acid, 4- (4'-trifluoro Chloromethylbenzenesulfonyloxy) benzenesulfonic acid, 4- (pentafluorobenzenesulfonyloxy) benzenesulfonic acid, 4- (2-naphthalenesulfonyloxy) benzenesulfonic acid, 3-methoxy-4- (4'-toluenesulfate Phenyloxy) benzenesulfonic acid, 3-methyl-4- (4'-toluenesulfonyloxy) benzenesulfonic acid, 2- (4'-toluenesulfonyloxy) naphthalene-6-sulfonic acid, 1- (4'-toluenesulfonyl Oxy) naphthalene-4-sulfonic acid, 1- (4'-toluenesulfonyloxy) naphthalene-8-sulfonic acid, 2,5-bis (4'-toluenesulfonyloxy) benzenesulfonic acid, 2,5-bis (4 ' -Methoxybenzenesulfonyloxy) benzenesulfonic acid, etc. Although it is mentioned, it is not limited to this.
[144] In addition, although the synthesis method of the said O- arylsulfonyl oxime compound is as follows, it is not limited to this.
[145] The (arylsulfonyloxy) aryl sulfonic acid can be synthesized with reference to Japanese Unexamined Patent Publication No. 2001-122850 (Patent Document 10), and it is hydroxyaryl sulfonic acid, or hydroxyaryl sulfonate and arylsulfonyl halide or aryl The sulfonic anhydride is reacted in the presence of a base such as sodium hydroxide or potassium hydroxide to obtain (arylsulfonyloxy) sodium sulfonate or the like.
[146]
[147] (In formula, R, m, n, k are the same as the above, and Hal represents a bromine atom and a chlorine atom.)
[148] More specifically, as hydroxyaryl sulfonic acid, 4-phenol sulfonic acid, 3-methyl-4- phenol sulfonic acid, 3-methoxy-4- phenol sulfonic acid, 3-nitro-4- phenol sulfonic acid, hydroquinone-2- sulfonic acid, 1, 4-naphtholsulfonic acid, 1,5-naphtholsulfonic acid, 2,6-naphtholsulfonic acid, 1,8-naphtholsulfonic acid, 6,7-dihydroxy-2-naphthalenesulfonic acid, 5,7-dinitro-8-hydroxy 2-naphthalene sulfonic acid etc. are mentioned, As an aryl sulfonyl halide, benzene sulfonyl chloride, 4-toluene sulfonyl chloride, 4-ethylbenzene sulfonyl chloride, 4-methoxybenzene sulfonyl chloride, 4-fluoro Benzenesulfonyl chloride, 4-trifluoromethylbenzenesulfonyl chloride, 2,4,6-trimethylbenzenesulfonyl chloride, pentafluorobenzenesulfonyl chloride, 2-naphthalenesulfonyl chloride, and the like. It is not limited.
[149] Furthermore, the sulfonic acid and sulfonate obtained are synthesized by sulfonyl halide with phosphorus pentachloride, thionyl chloride and the like. Synthesis of sulfonyl chloride from sulfonates is described in the above-mentioned Japanese Patent Application Laid-Open No. 2001-199955 or Japanese Patent Laid-Open No. 61-251652, Synthetic Organic Chemistry (Wagner, Zook et al. 821, Jhon Wiley & Sons, 1965)).
[150]
[151] (In formula, R, m, n, k are the same as the above, and Hal represents a bromine atom and a chlorine atom.)
[152] A oxime compound may use a commercial item, and well-known literature (patent documents 1-9: US Patent No. 6004724, US Pat. No. 6,626,38, Japanese Patent Laid-Open No. 9-95479, Japanese Patent Laid-Open No. 9- 9) 208554, Japanese Patent Laid-Open No. 9-230588, Japanese Patent No. 2906999, Japanese Patent Laid-Open No. 9-301948, Japanese Patent Laid-Open No. 2000-314956, Japanese Patent Laid-Open No. 2001-233842 It can also synthesize | combine as described in.
[153] The desired O-sulfonyl oxime compound is preferably dissolved in an oxime compound and a corresponding sulfonyl halide or a sulfonic anhydride thereof in a solvent such as THF, CH ₂ Cl ₂ , and reacted under basic conditions. Or it is also preferable to make it react in basic solvents, such as pyridine.
[154]
[155]
[156] (Wherein, R, r, r ', k, m, n, p, q, EWG, G, G', G '' represents the same meaning as above.)
[157] Although the definition of the substituent of the O-arylsulfonyl oxime compound represented by General formula (1), (1a), (1b), (1c) of this invention is as having mentioned above, the more preferable compound is shown concretely.
[158] As the O-arylsulfonyl oxime compound represented by the formula (1) of the present invention,
[159]
[160] Divided by, as a specific example of the oxime portion
[161]
[162] These etc. are mentioned, As a sulfonyl group, what was mentioned above is mentioned,
[163]
[164] These etc. are mentioned, and the combination of an oxime part and a sulfonyl group is arbitrary.
[165] Especially, the following are mentioned as an arylsulfonyl oxime compound represented by more preferable general formula (1).
[166]
[167]
[168] Next, the O-arylsulfonyl oxime compound represented by the formula (1a) of the present invention as follows,
[169]
[170] If divided into oxime,
[171]
[172] The sulfonyl group is the same as that described in the above 1, and the combination of the oxime moiety and the sulfonyl group is arbitrary.
[173] Among them, the followings are preferably used.
[174]
[175] When the O-arylsulfonyl oxime compound represented by the general formula (1b) of the present invention is divided and expressed as follows,
[176]
[177] Represented by the oxime,
[178]
[179] The sulfonyl group is the same as that described in the above 1, and the combination of the oxime moiety and the sulfonyl group is arbitrary.
[180] Among them, the followings are preferably used.
[181]
[182]
[183]
[184] Next, the O-arylsulfonyl oxime compound represented by the general formula (1c) of the present invention as follows,
[185]
[186] When we divide and display as oxime part (glyoxime)
[187]
[188] The sulfonyl group is the same as that described in the above 1, and the combination of the oxime moiety and the sulfonyl group is arbitrary.
[189] Among them, the followings are preferably used.
[190]
[191]
[192]
[193] In a third aspect of the present invention, in the O-arylsulfonyl oxime compound, a photoacid generator for a chemically amplified resist material which generates arylsulfonyloxyarylsulfonic acid represented by the formula (1d) by exposure, or the chemical formula A resist material containing a photoacid generator for a chemically amplified resist material represented by 1, 1a, 1b, 1c, namely, an integrated body sensitive to radiation such as ultraviolet rays, far ultraviolet rays, electron beams, X-rays, excimer lasers, gamma rays, synchrotron radiation, and the like. Provided are chemically amplified resist materials for fabricating circuits.
[194] In the O-arylsulfonyl oxime compound of the present invention, a resist material containing a photoacid generator that generates formula (1d) by exposure or a photoacid generator represented by formula (1), (1a), (1b) or (1c) is positive and negative. Can be used as a type. In particular, a positive resist material is used more preferably because of the different resolution. The specific form is as follows.
[195] <1> (A) Resin whose solubility in alkaline developing solution changes by the action of an acid,
[196] (B) a photoacid generator for generating the formula (1d) by exposure in the O-arylsulfonyl oxime compound, or a photoacid generator represented by the formula (1), (1a), (1b), (c),
[197] (F) organic solvent
[198] A chemically amplified positive resist material comprising a.
[199] <2> In addition, in <1>,
[200] (C) Photoacid generators other than the component (B) which generate an acid by irradiation
[201] A chemically amplified positive resist material comprising a.
[202] <3> In addition, in <1> or <2>,
[203] (D) basic additives
[204] Chemically amplified positive resist material comprising a.
[205] <4> In addition, in any one of <1>-<3>,
[206] (E) organic acid derivatives
[207] A chemically amplified positive resist material comprising a.
[208] <5> In addition, in any one of <1>-<4>,
[209] (G) A compound having a molecular weight of 3,000 or less whose solubility in an alkaline developer is changed by the action of an acid.
[210] Chemically amplified positive resist material comprising a.
[211] <6> (B) Photoacid generator which generate | occur | produces said Formula (1d) by exposure in O-arylsulfonyl oxime compound, or the photo-acid generator represented by said Formula (1), (1a), (1b), (c),
[212] (F) an organic solvent,
[213] (H) alkali soluble resins,
[214] (I) an acid crosslinking agent which forms a crosslinked structure by the action of an acid
[215] Chemically amplified negative resist material comprising a.
[216] <7> In addition, in <6>,
[217] The chemically amplified negative resist material containing the said (C) component.
[218] <8> In addition, in <6> and <7>,
[219] A chemically amplified negative resist material, comprising the component (D).
[220] <9> In addition, in any one of <6>-<8>,
[221] (J) Alkali-soluble compounds having a molecular weight of 2,500 or less
[222] Chemically amplified negative resist material comprising a
[223] Although it is mentioned, it is not limited to this.
[224] Hereinafter, each component is described in detail.
[225] The resin in which the solubility in the alkaline developer is changed by the action of the acid (A) component is not particularly limited, but a part or all of the phenolic hydroxyl group and / or carboxyl group of the alkali-soluble resin may be used as a protecting group that is unstable to an acid having COC. It is protected.
[226] As alkali-soluble resin which has the said phenolic hydroxyl group and / or carboxyl group, p-hydroxy styrene, m-hydroxy styrene, (alpha) -methyl- p-hydroxy styrene, 4-hydroxy 2-methylstyrene, 4-hydroxy Homo or copolymer of hydroxy 3-methylstyrene, hydroxy indene, methacrylic acid, acrylic acid, and the copolymer which introduce | transduced carboxylic acid derivative, diphenylethylene, etc. in the terminal of these polymers are mentioned.
[227] Further, in addition to the above units, hydrogenated products of styrene, α-methylstyrene, acrylic acid esters, methacrylic acid esters, hydroxystyrenes, maleic anhydrides, maleimide, substitutions or the like in such a proportion that the solubility in an alkaline developer is not extremely reduced. The copolymer which introduce | transduced the unit which does not have alkali-soluble site | parts, such as unsubstituted indene, may be sufficient, and as a substituent of acrylic acid ester and methacrylic acid ester, any may be used as long as it does not generate | occur | produce decomposition by an acid. Although aromatic groups, such as a C1-C8 linear, branched or cyclic alkyl group, an aryl group, etc. are mentioned specifically, It is not limited to this.
[228] Although an example of an alkali-soluble polymer is shown below, it can be used also as a raw material of resin whose solubility with respect to an alkaline developing solution changes by the action of the acid which is (A) component, and alkali-soluble resin of (H) component. Examples include poly p-hydroxystyrene, poly m-hydroxystyrene, poly4-hydroxy2-methylstyrene, poly4-hydroxy-3-methylstyrene, polyα-methyl p-hydroxystyrene, partial hydrogenation Poly p-hydroxystyrene copolymer, poly (p-hydroxystyrene-α-methyl-p-hydroxystyrene) copolymer, poly (p-hydroxystyrene-α-methylstyrene) copolymer, poly (p- Hydroxystyrene-styrene) copolymer, poly (p-hydroxystyrene-m-hydroxystyrene) copolymer, poly (p-hydroxystyrene-styrene) copolymer, poly (p-hydroxystyrene-indene) air Copolymer, poly (p-hydroxystyrene-acrylic acid) copolymer, poly (p-hydroxystyrene-methacrylic acid) copolymer, poly (p-hydroxystyrene-methylacrylate) copolymer, poly (p-hydroxy Oxy styrene-acrylic acid-methyl methacrylate) copolymer, poly (p-hydroxy styrene-methyl acrylate) copolymer, poly (p-hydroxystyrene-methacrylate-methylmethacrylate) copolymer, polymethacrylic acid, polyacrylic acid, poly (acrylic acid-methylacrylate) copolymer, poly (methacrylic acid-methylmethacrylate) copolymer Copolymer, poly (acrylic acid-maleimide) copolymer, poly (methacrylic acid-maleimide) copolymer, poly (p-hydroxystyrene-acrylic acid-maleimide) copolymer, poly (p-hydroxystyrene-methacryl) Acid-maleimide) copolymers and the like, but are not limited to these combinations.
[229] Preferably, poly p-hydroxystyrene, partially hydrogenated poly p-hydroxystyrene copolymer, poly (p-hydroxystyrene-styrene) copolymer, poly (p-hydroxystyrene-indene) copolymer, poly (p-hydroxy styrene-acrylic acid) copolymer and poly (p-hydroxy styrene-methacrylic acid) copolymer are mentioned.
[230] In particular, alkali-soluble resin which has the following repeating unit 2 or 2b, 2c is preferable.
[231]
[232]
[233]
[234] In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, x is 0 or a positive integer, y is a positive integer, and x + is a number satisfying y≤5, M and N are positive integers, 0 <N / (M + N + L) ≤0.5, and yy is 0 or a positive integer, x + yy≤ It is a number which satisfy | fills 4, A and B are positive integers, C is a positive integer, and it is a number which satisfy | fills 0 <B / (A + B + C) <0.5.
[235] In order to synthesize the high molecular compound of Chemical Formula 2c, as one method, an acetoxy styrene monomer, a (meth) acrylic acid tertiary alkyl ester monomer and an indene monomer are thermally polymerized by adding a radical initiator in an organic solvent to obtain a high molecular compound. Alkaline hydrolysis in an organic solvent, an acetoxy group deprotection, and the high molecular compound of hydroxy styrene, the (meth) acrylic-acid tertiary alkyl ester, and the three-component copolymer of indene can be obtained. Toluene, benzene, tetrahydrofuran, diethyl ether, dioxane, etc. can be illustrated as an organic solvent used at the time of superposition | polymerization. Examples of the polymerization initiator include 2,2'-azobisisobutyronitrile, 2,2'-azobis (2,4-dimethylvaleronitrile), dimethyl-2,2-azobis (2-methylpropionate), Benzoyl peroxide, lauroyl peroxide, etc. can be illustrated, Preferably it can superpose | polymerize by heating to 50-80 degreeC. The reaction time is 2 to 100 hours, preferably 5 to 20 hours. Ammonia water, triethylamine, etc. can be used as a base at the time of alkali hydrolysis. The reaction temperature is -20 to 100 ° C, preferably 0 to 60 ° C, and the reaction time is 0.2 to 100 hours, preferably 0.5 to 20 hours.
[236] Or it may be a high molecular compound having a structure of a denpolymer or a hyperbranched polymer as described below.
[237]
[238] Wherein ZZ is represented by a divalent organic group selected from CH ₂ , CH (OH), CR ⁵ (OH), C═O, C (OR ⁵ ), (OH), or —C (OH) = Represents a trivalent organic group, F may be different or identical to each other, is a positive integer, H is a positive integer, H / (H + F) = 0.001 to 0.1, and XX is 1 or 2 And R ⁴ , R ⁵ , x and y are the same as above.
[239] Synthesis of a den polymer or a hyperbranched polymer of the phenol derivative is appropriately reacted with a branched monomer such as chloromethyl styrene during the synthesis of living anionic polymerization of polymerizable component monomers such as 4-tert-butoxystyrene.
[240] More specifically, living anionic polymerization is initiated using a polymerizable component monomer such as 4-tert-butoxystyrene, and a predetermined amount is polymerized, followed by reacting branching monomers such as chloromethylstyrene. Subsequently, the polymerizable component monomers such as 4-tert-butoxy styrene and / or the branching monomers such as chloromethyl styrene are added again and polymerized. By repeating this operation several times, a denpolymer or a hyperbranched polymer can be synthesized, and if necessary, a protecting group for carrying out living polymerization is deprotected to obtain a denpolymer or a hyperbranched polymer of a phenol derivative.
[241] Examples of the branching monomers are shown below.
[242]
[243] (In formula, R <^4> , R <^5> , x and y are the same as the above.)
[244] Specific examples of the denpolymer and the hyperbranched polymer include those having a repeating unit represented by the following Schemes 8 to 12.
[245]
[246] (In formula, --- represents the polymer chain derived from the monomer of a phenol derivative, K represents the unit derived from the said branching monomer, and the number of dotted lines does not represent the number of monomers.)
[247] As a method for producing the denpolymer or the hyperbranched polymer of the phenol derivative, it can be synthesized by reacting a compound having a polymerizable component with a stop component during the living polymerization and further proceeding the polymerization. By repeating this operation arbitrarily, the denpolymer or hyperbranched polymer of a phenol derivative can be manufactured. As long as living polymerization, any polymerization method is possible. Among them, living anion polymerization is preferably used as the polymerization method which is particularly easy to control. These can be synthesize | combined with reference to Unexamined-Japanese-Patent No. 2000-344836.
[248] The molecular weight of these alkali-soluble high molecular weight compounds is preferably 3,000 to 100,000 as the weight average molecular weight, and when the molecular weight is less than 3,000, the performance as a polymer is poor, the heat resistance is often low, and the film formation is not sufficient, and when the molecular weight exceeds 100,000, the molecular weight is too large. This causes problems such as solubility in a developing solution, solubility in a resist solvent, and the like. Moreover, dispersion degree is 3.5 or less, Preferably it is 1.5 or less. If the degree of dispersion is greater than 3.5, resolution often deteriorates. Although it does not specifically limit in a manufacturing method, A living dispersion polymerization (narrow dispersibility) polymer can be synthesize | combined by using living anion polymerization for poly-p-hydroxy styrene.
[249] The resist material of this invention uses resin (particularly said alkali-soluble resin) which has COC bond (acid labile group) as (A) component, and changes solubility to alkaline developing solution by cutting | disconnecting COC bond by the action of an acid. It is effective, in particular, having a repeating unit of the formula (2), the hydrogen atom of the phenolic hydroxyl group is a ratio of more than 0 mol% to 80 mol% of the total hydrogen atoms of the phenolic hydroxyl group by one or two or more acid labile groups Polymer compounds having a weight average molecular weight of 3,000 to 100,000 substituted with are preferred.
[250] Or in the high molecular compound (copolymer containing p-hydroxy styrene and / or (alpha) -methyl- p-hydroxy styrene, and acrylic acid and / or methacrylic acid) which has a repeating unit of the said Formula (2b), The hydrogen atom of the carboxyl group of acrylic acid and / or methacrylic acid is substituted by 1 type, or 2 or more types of acid labile groups, and the unit based on the acrylate ester and methacrylic acid ester in this high molecular compound averages more than 0 mol% 50 mol The polymer compound contained in the ratio of% or less is preferable, and 1 part of hydrogen atoms of the phenolic hydroxyl group of p-hydroxy styrene and / or (alpha) -methyl- p-hydroxy styrene is 1 type, or 2 or more types of acid labile groups It may be substituted by. In this case, an average of 0 moles of units based on p-hydroxystyrene and / or α-methyl-p-hydroxystyrene substituted by an acrylic acid ester and / or methacrylic acid ester and an acid labile group in the high molecular compound The high molecular compound contained in the ratio of more than% and 80 mol% or less is preferable.
[251] In addition, in the high molecular compound (copolymer containing p-hydroxy styrene and / or (alpha) -methyl- p-hydroxy styrene, and substituted and / or unsubstituted indene) which has a repeating unit of Formula (2c), Some of the hydrogen atoms of the phenolic hydroxyl groups of p-hydroxystyrene and / or α-methyl-p-hydroxystyrene are substituted by one or two or more acid labile groups, and / or acrylic acid and / or meta When the high molecular compound in which the hydrogen atom of the carboxyl group of krylic acid is substituted by 1 type or 2 or more types of acid labile groups is preferable, and when substituted indene contains a hydroxyl group, 1 part of hydrogen atoms of the hydroxyl group is 1 type, or 2 or more types It may be substituted by an acid labile group. In this case, units based on p-hydroxystyrene and / or α-methyl-p-hydroxystyrene substituted by acid labile groups in the polymer compound and acrylic acid and / or methacrylic acid substituted by acid labile groups The polymer compound which contains the unit based on and the unit based on indene substituted by the acid labile group in the ratio of more than 0 mol% and 80 mol% or less on average is preferable.
[252] As such a polymer compound, a polymer compound having a weight average molecular weight of 3,000 to 100,000 having a repeating unit represented by the following formulas (2a), (2aa) and (2ab) is preferable.
[253] <Formula 2a>
[254]
[255] <Formula 2aa>
[256]
[257] <Formula 2ab>
[258]
[259] In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, x is 0 or a positive integer, y is a positive integer, and x + is a number satisfying y ≦ ⁵ , R ⁶ represents an acid labile group, S and T represent a positive integer, 0 <T / (S + T) ≦ 0.8, and R ^6a represents a hydrogen atom or Is an acid labile group, but at least a portion is an acid labile group, M, N are positive integers, L is 0 or a positive integer, and 0 <N / (M + N + L) ≦ 0.5 and 0 <(N + L) /(M+N+L)≤0.8, yy is 0 or positive integer, x + yy≤4, A, B is positive integer, C, D, E Is 0 or a positive integer, where 0 <(B + E) / (A + B + C + D + E) ≤0.5 and 0 <(C + D + E) / (A + B + C + D + E ) Is a number satisfying 0.8.
[260] R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, and examples of the linear, branched or cyclic alkyl group include methyl, ethyl, propyl, isopropyl, n-butyl and isobutyl. , tert-butyl group, cyclohexyl group, cyclopentyl group and the like can be exemplified.
[261] Here, as an acid labile group, when protecting a part of phenolic hydroxyl group, part or all of carboxyl group of alkali-soluble resin with an acid labile substituent represented by COC bond, it is variously selected as an acid labile group, but in particular, the following Chemical Formulas 4 to 7 A C 4-20, preferably a C3-C15 tertiary alkyl group, each alkyl group has a trialkylsilyl group having 1 to 6 carbon atoms, an oxoalkyl group having 4 to 20 carbon atoms, or an aryl having 7 to 20 carbon atoms It is preferable that it is a group substituted alkyl group.
[262] <Formula 4>
[263]
[264] <Formula 5>
[265]
[266] <Formula 6>
[267]
[268] <Formula 7>
[269]
[270] (Wherein R ¹⁰ and R ¹¹ represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, preferably 1 to 10 carbon atoms, specifically methyl, ethyl, propyl, isopropyl, n- butyl group, sec- butyl group, tert- butyl group, a cyclopentyl group, a cyclohexyl group, can be exemplified such as a 2-ethylhexyl group, n- octyl group, R ¹² is C 1 -C 18, preferably Represents a monovalent hydrocarbon group which may have a hetero atom such as an oxygen atom of 1 to 10, and a linear, branched, cyclic alkyl group, and a part of these hydrogen atoms are hydroxyl group, alkoxy group, oxo group, amino group, alkylamino group, etc. The substituted thing is mentioned, Specifically, the following substituted alkyl group can be illustrated.
[271]
[272] R ¹⁰ and R ¹¹ , R ¹⁰ and R ¹² , R ¹¹ and R ¹² may form a ring, and in the case of forming a ring, R ¹⁰ , R ¹¹ and R ¹² each have 1 to 18 carbon atoms, preferably 1 A straight or branched alkylene group of from 10 to 10;
[273] R ¹³ is a C 4-20, preferably a 4-15 tertiary alkyl group, each alkyl group represents a trialkylsilyl group having 1 to 6 carbon atoms, an oxoalkyl group having 4 to 20 carbon atoms, or a group represented by Chemical Formula 4, Specific examples of tertiary alkyl groups include tert-butyl group, tert-amyl group, 1,1-diethylpropyl group, 1-ethylcyclopentyl group, 1-butylcyclopentyl group, 1-ethylcyclohexyl group and 1- Butylcyclohexyl group, 1-ethyl-2-cyclopentenyl group, 1-ethyl-2-cyclohexenyl group, 2-methyl-2-adamantyl group, 2-ethyl-2-adamantyl group, 1-adamant And a butyl-1-methyl-ethyl group. Specific examples of the trialkylsilyl group include trimethylsilyl group, triethylsilyl group, dimethyl-tert-butylsilyl group, and the like. , 3-oxocyclohexyl group, 4-methyl-2-oxooxan-4-yl group, 5-methyl-5-oxooxolan-4-yl group, and the like. z is an integer of 0-6.
[274] R ¹⁴ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an aryl group which may be substituted with 6 to 20 carbon atoms. Specific examples of the linear, branched or cyclic alkyl group include a methyl group, an ethyl group, a propyl group, Isopropyl group, n-butyl group, sec-butyl group, tert-butyl group, tert-amyl group, n-pentyl group, n-hexyl group, cyclopentyl group, cyclohexyl group, cyclopentylmethyl group, cyclopentylethyl group, A cyclohexyl methyl group, a cyclohexyl ethyl group, etc. can be illustrated, A phenyl group, methylphenyl group, naphthyl group, anthryl group, phenanthryl group, pyrenyl group etc. can be illustrated specifically, as an aryl group which may be substituted. h is 0 or 1, i is 0, 1, 2, 3, and is a number which satisfy | fills 2h + i = 2 or 3.
[275] R ¹⁵ represents an aryl group which may be substituted with 1 to 8 carbon atoms of a straight, branched or cyclic alkyl group or a group having 6 to 20 carbon atoms, specifically, there can be mentioned the same meanings as R ^14. R ¹⁶ to R ²⁵ each independently represent a hydrogen atom or a monovalent hydrocarbon group which may include a hetero atom having 1 to 15 carbon atoms, and include methyl, ethyl, propyl, isopropyl, n-butyl, and sec-butyl groups. , tert-butyl group, tert-amyl group, n-pentyl group, n-hexyl group, n-octyl group, n-nonyl group, n-decyl group, cyclopentyl group, cyclohexyl group, cyclopentylmethyl group, cyclopentyl Linear, branched, cyclic alkyl groups such as ethyl group, cyclopentylbutyl group, cyclohexylmethyl group, cyclohexylethyl group, cyclohexylbutyl group, and some of these hydrogen atoms are hydroxyl group, alkoxy group, carboxy group, alkoxycarbonyl group, oxo group, amino group And an alkylamino group, cyano group, mercapto group, alkylthio group, sulfo group and the like. R ¹⁶ to R ²⁵ may form a ring with each other (for example, R ¹⁶ and R ¹⁷ , R ¹⁶ and R ¹⁸ , R ¹⁷ and R ¹⁹ , R ¹⁸ and R ¹⁹ , R ²⁰ and R ²¹ , R ²² And R ²³ ), in which case a divalent hydrocarbon group which may include a hetero atom having 1 to 15 carbon atoms, and one hydrogen atom removed from the one exemplified in the monovalent hydrocarbon group can be exemplified. . In addition, R ¹⁶ to R ²⁵ may be bonded to adjacent carbons without any intervening and may form a double bond (for example, R ¹⁶ and R ¹⁸ , R ¹⁸ and R ²⁴ , R ²² and R ²⁴ etc.).
[276] As a linear or branched thing among the acid labile groups represented by the said Formula (4), specifically, the following group can be illustrated.
[277]
[278] As the cyclic one among the acid labile groups represented by the formula (4), specifically, tetrahydrofuran-2-yl group, 2-methyltetrahydrofuran-2-yl group, tetrahydropyran-2-yl group, 2-methyltetrahydropyran -2-yl group etc. can be illustrated.
[279] Specific examples of the acid labile group of formula (5) include tert-butoxycarbonyl group, tert-butoxycarbonylmethyl group, tert-amyloxycarbonyl group, tert-amyloxycarbonylmethyl group, 1,1-diethylpropyloxycarbonyl group, 1 , 1-diethylpropyloxycarbonylmethyl group, 1-ethylcyclopentyloxycarbonyl group, 1-ethylcyclopentyloxycarbonylmethyl group, 1-ethyl-2-cyclopentenyloxycarbonyl group, 1-ethyl-2-cyclopentenyl Oxycarbonylmethyl group, 1-ethoxyethoxycarbonylmethyl group, 2-tetrahydropyranyloxycarbonylmethyl group, 2-tetrahydrofuranyloxycarbonylmethyl group, etc. can be illustrated.
[280] Specific examples of the acid labile group of the formula (6) include 1-methylcyclopentyl, 1-ethylcyclopentyl, 1-n-propylcyclopentyl, 1-isopropylcyclopentyl, 1-n-butylcyclopentyl, and 1-sec- Butylcyclopentyl, 1-methylcyclohexyl, 1-ethylcyclohexyl, 3-methyl-1-cyclopenten-3-yl, 3-ethyl-1-cyclopenten-3-yl, 3-methyl-1-cyclohexene -3-yl, 3-ethyl-1-cyclohexen-3-yl, 1-cyclohexyl-cyclopentyl and the like can be exemplified.
[281] As an acid labile group of the said General formula (7), the following group can be illustrated specifically.
[282]
[283] Examples of the tertiary alkyl group having 4 to 20, preferably 4 to 15, carbon atoms include tert-butyl group, tert-amyl group, 1,1-diethylpropyl group, 1-ethylcyclopentyl group, 1-butylcyclopentyl group, 1-ethylcyclohexyl group, 1-butylcyclohexyl group, 1-ethyl-2-cyclopentenyl group, 1-ethyl-2-cyclohexenyl group, 2-methyl-2-adamantyl group, 2-ethyl-2 -Adamantyl group, 1-adamantyl-1-methyl-ethyl group, etc. are mentioned.
[284] Trialkylsilyl group, triethylsilyl group, tert- butyldimethylsilyl group etc. are mentioned as each alkyl group having a C1-C6 trialkylsilyl group, respectively.
[285] Examples of the oxoalkyl group having 4 to 20 carbon atoms include a 3-oxocyclohexyl group and a group represented by the following chemical formula.
[286]
[287] Examples of the aryl group substituted alkyl group having 7 to 20 carbon atoms include benzyl group, methylbenzyl group, dimethylbenzyl group, diphenylmethyl group, 1,1-diphenylethyl group, and the like.
[288] Resin (A) in which the solubility in an alkaline developer is changed by the action of an acid used in a resist material containing the O-arylsulfonyl oxime compound of the present invention as a photoacid generator is also a part of hydrogen atoms of the phenolic hydroxyl group. Or crosslinking intramolecularly and / or intermolecularly by a crosslinking group having a COC group represented by the following formula (3) in a proportion of more than 0 mol% and 50 mol% or less of the entire phenolic hydroxyl group of the high molecular compound represented by 2b, 2c, 2d. It can be set as resin. Specific examples and synthesis of the crosslinked polymer by an acid labile group can be referred to Japanese Patent Application Laid-Open No. 11-190904.
[289]
[290] In formula, R <^7> , R <^8> represents a hydrogen atom or a C1-C8 linear, branched or cyclic alkyl group, and R <^7> and R <^8> may form a ring and when forming a ring, R <^7> And R ⁸ each represent a linear or branched alkylene group having 1 to 8 carbon atoms, R ⁹ represents a linear, branched or cyclic alkylene group having 1 to 10 carbon atoms, and b is an integer of 0 or 1 to 10; And AA represents a valent aliphatic or alicyclic saturated hydrocarbon group, aromatic hydrocarbon group or heterocyclic group having 1 to 50 carbon atoms, and these groups may be interposed with a hetero atom and are part of a hydrogen atom bonded to the carbon atom. May be substituted by hydroxyl group, carboxyl group, carbonyl group or halogen atom.
[291] Preferably, in formula (3), R ⁷ is a methyl group, R ⁸ is a hydrogen atom, a is 1, b is 0, AA is ethylene, 1,4-butylene or 1,4-cyclohexylene .
[292] In addition, when obtaining the high molecular compound bridge | crosslinked intermolecular and / or intermolecular by these crosslinking groups which have these COC groups, it can synthesize | combine by reacting a corresponding uncrosslinked high molecular compound and alkenyl ether by a conventional method under acid-catalyzed conditions. .
[293] In addition, when decomposition of another acid labile group proceeds under an acid catalyst condition, the alkenyl ether is reacted with hydrochloric acid or the like to make a halogenated alkyl ether, and then, the reaction product is reacted with a high molecular compound under basic conditions by a conventional method to obtain a target product.
[294] Here, as an example of alkenyl ether, ethylene glycol divinyl ether, triethylene glycol divinyl ether, 1,2-propanediol divinyl ether, 1, 3- propanediol divinyl ether, 1, 3- butanediol divinyl ether , 1,4-butanediol divinyl ether, neopentyl glycol divinyl ether, trimethylolpropane trivinyl ether, trimethylol ethanetrivinyl ether, hexanediol divinyl ether, 1,4-cyclohexanediol divinyl ether, etc. are mentioned. Can be, but is not limited to this.
[295] In the chemically amplified positive resist material of the present invention, the resin of component (A) is as described above, but as the acid labile group, the phenolic hydroxyl group is a 1-ethoxyethyl group, 1-ethoxypropyl group, or tetrahydrofuranyl group. , Tetrahydropyranyl group, tert-butyl group, tert-amyl group, 1-ethylcyclohexyloxycarbonylmethyl group, tert-butoxycarbonyl group, tert-butoxycarbonylmethyl group, and R ^{7 in} Formula 3 is a methyl group R ⁸ is a hydrogen atom, a is 1, b is 0, and a substituent in which A is represented by ethylene, 1,4-butylene or 1,4-cyclohexylene is preferably used, and methacrylic acid / acrylic acid is used. Examples of the hydrogen atom of the carboxyl group include tert-butyl group, tert-amyl group, 2-methyl-2-adamantyl group, 2-ethyl-2-adamantyl group, 1-ethylcyclopentyl group, 1-ethylcyclohexyl group, 1-cyclohexylcyclopentyl group, 1-ethylnorbornyl group, tetrahydrofuranyl group, tetrahi A is preferably protected by a substituent group represented pyranyl.
[296] These substituents may be present alone or in combination of two or more. It may also be a mixture of polymers having different kinds of substituents.
[297] Although the substituent ratio with respect to the phenol and carboxyl group in the polymer of these substituents is arbitrary, it is preferable that the dissolution rate of the unexposed part when it apply | coats on a board | substrate as a resist material shall be 0.01-10 microseconds / second (Angstrom / second) ( 2.38% of TMAH (tetramethylammonium hydroxide) developer).
[298] In the case of using a polymer having a large proportion of carboxyl groups, in order to lower the alkali dissolution rate, it is necessary to increase the substitution rate or introduce a non-acid-decomposable substituent described later.
[299] When introducing an acid labile group of intramolecular and / or intermolecular crosslinking, the substituent rate by crosslinking is preferably 20 mol% or less, preferably 10 mol% or less on average with respect to the entire repeating unit of the polymer compound. When the substituent rate is too high, solubility, stability, and resolution may deteriorate due to high molecular weight by crosslinking. More preferably, it is preferable to introduce another non-crosslinkable acid labile group into a crosslinked polymer by substitution rate of 10 mol% or less in average, and to adjust a dissolution rate to the said range.
[300] In the case of using poly p-hydroxy styrene, the substituents having strong dissolution inhibiting properties such as tert-butoxycarbonyl group and the weak dissolving inhibitors such as acetal type have different optimum substituent rates, but the total substitution rate is high. It is preferable to set it as an average of 10-40 mol% with respect to the whole repeating unit of Preferably, Preferably it is 20-30 mol%.
[301] As for the preferable molecular weight of the polymer which introduce | transduced these acid labile groups, 3,000-100,000 are preferable at a weight average molecular weight, and when it is less than 3,000, the performance as a polymer is inferior, heat resistance is low, and film forming property is not enough enough, and when it is larger than 100,000, Since the molecular weight is too large, problems such as solubility in a developing solution, solubility in a resist solvent, and the like arise.
[302] In the case of using a non-crosslinking acid labile group, the dispersion degree is preferably 3.5 or less, preferably 1.5 or less. If the degree of dispersion is greater than 3.5, resolution often deteriorates. When using an acid labile group of a crosslinking system, it is preferable that the dispersion degree of alkali-soluble resin of a raw material is 1.5 or less, and it is preferable that dispersion degree is 3 or less after protection by the acid labile group of a crosslinking system. When dispersion degree is higher than 3, solubility, applicability | paintability, storage stability, and resolution are inferior in many cases.
[303] Moreover, in order to have various functions, a substituent may be introduce | transduced into a part of phenolic hydroxyl group and carboxyl group of the said acid labile group protection polymer. For example, a substituent for always maintaining adhesiveness with a board | substrate, the non-acid-decomposable group which adjusts the solubility to alkaline developing solution, and the substituent for improvement of etching tolerance are mentioned, For example, 2-hydroxyethyl group and 2-hydroxy Roxypropyl group, methoxymethyl group, methoxycarbonyl group, ethoxycarbonyl group, methoxycarbonylmethyl group, ethoxycarbonylmethyl group, 4-methyl-2-oxo-4-oxolanyl group, 4-methyl-2-oxo- 4-oxanyl group, methyl group, ethyl group, propyl group, n-butyl group, sec-butyl group, acetyl group, pivaloyl group, adamantyl group, isoboroyl group, cyclohexyl group, etc. may be mentioned, but is limited thereto. It doesn't work.
[304] Although it is arbitrary as an addition amount of the said resin in the resist material of this invention, it is 65-99 weight part in 100 weight part of solid content in a resist, Preferably it is 65-98 weight part. In addition, the said solid content means "all components except the solvent for resist materials of this invention."
[305] In the photoacid generator used as the component (B) of the present invention, that is, the photoacid generator which generates the formula (1d) by exposure in the O-arylsulfonyl oxime compound, or represented by the formulas (1), (1a), (1b) and (1c). The compound mentioned above can be mentioned as a photo-acid generator.
[306] As addition amount of these (B) component to the chemically amplified resist material of a photo-acid generator, it is 0.1-10 weight part in 100 weight part of solid content in a resist material, Preferably it is 1-5 weight part. If the amount is less than the above range, there is a possibility that an acid amount effective for deprotecting the acid labile group in the polymer compound may not be obtained. If the amount is too high, a rectangular pattern is not obtained by lowering the transmittance of the resist film, and particles in the resist storage are not obtained. As described above, there is a possibility of causing a problem of precipitates. The said photo-acid generator, ie, (B) component, can be used individually or in mixture of 2 or more types.
[307] In addition, when adding photoacid generators other than the said (B) component of this invention as a photoacid generator of (C) component, it is ultraviolet-ray, far ultraviolet rays, an electron beam, X-ray, an excimer laser, gamma ray, a synchrotron radiation, etc. Any compound that generates an acid by irradiation with high energy ray may be used. Preferred photoacid generators include sulfonium salts, iodonium salts, sulfonyldiazomethanes, and N-sulfonyloxydicarboxyimide acid generators. Although detailed below, these can be used individually or in mixture of 2 or more types.
[308] Sulfonium salts are salts of sulfonium cations and sulfonates, and as sulfonium cations, triphenylsulfonium, (4-tert-butoxyphenyl) diphenylsulfonium, bis (4-tert-butoxyphenyl) phenylsulfonium, Tris (4-tert-butoxyphenyl) sulfonium, (3-tert-butoxyphenyl) diphenylsulfonium, bis (3-tert-butoxyphenyl) phenylsulfonium, tris (3-tert-butoxyphenyl ) Sulfonium, (3,4-ditert-butoxyphenyl) diphenylsulfonium, bis (3,4-ditert-butoxyphenyl) phenylsulfonium, tris (3,4-ditert-butoxyphenyl ) Sulfonium, diphenyl (4-thiophenoxyphenyl) sulfonium, (4-tert-butoxycarbonylmethyloxyphenyl) diphenylsulfonium, tris (4-tert-butoxycarbonylmethyloxyphenyl) Sulfonium, (4-tert-butoxyphenyl) bis (4-dimethylaminophenyl) sulfonium, tris (4-dimethylaminophenyl) sulfonium, 2-naphthyldiphenylsulfonium, dimethyl-2-naphthylsulfonium, 4-hydroxyphenyldimethylsulfonium, 4-methoxyphenyldimethylsulfonium, trimethylsulfo , 2-oxocyclohexylcyclohexylmethylsulfonium, trinaphthylsulfonium, tribenzylsulfonium, diphenylmethylsulfonium, dimethylphenylsulfonium, 2-oxo-2-phenylethylthiacyclopentanium, etc. are mentioned. Examples of the sulfonate include trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, and 4- Trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, mesitylenesulfonate, 2,4,6-triisopropylbenzenesulfonate, toluenesulfonate, benzenesulfonate, 4- (4'-toluenesul Phenyloxy) benzene sulfonate, naphthalene sulfonate, camphor sulfonate, octane sulfonate, dodecyl benzene sulfonate, butane sulfonate, methane sulfonate, etc. are mentioned, The sulfonium salt of these combinations is mentioned.
[309] Iodonium salts are salts of iodonium cations and sulfonates, diphenyl iodonium, bis (4-tert-butylphenyl) iodonium, 4-tert-butoxyphenylphenyl iodonium, 4-methoxy As aryl iodonium cations such as phenylphenyl iodonium and sulfonates, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, and 2,2,2-trifluoroethanesulfonate , Pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, mesitylenesulfonate, 2,4,6-triisopropylbenzenesulfonate, toluenesulfonate, benzenesulfo Nate, 4- (4-toluenesulfonyloxy) benzenesulfonate, naphthalenesulfonate, camphorsulfonate, octanesulfonate, dodecylbenzenesulfonate, butanesulfonate, methanesulfonate, and the like, and combinations thereof. Iodonium salts may be mentioned.
[310] Examples of the sulfonyl diazomethane include bis (ethylsulfonyl) diazomethane, bis (1-methylpropylsulfonyl) diazomethane, bis (2-methylpropylsulfonyl) diazomethane and bis (1,1-dimethyl). Ethylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (perfluoroisopropylsulfonyl) diazomethane, bis (phenylsulfonyl) diazomethane, bis (4-methylphenylsulfonyl ) Diazomethane, bis (2,4-dimethylphenylsulfonyl) diazomethane, bis (4-acetyloxyphenylsulfonyl) diazomethane, bis (4-methanesulfonyloxyphenylsulfonyl) diazomethane, Bis (4- (4-toluenesulfonyloxy) phenylsulfonyl) diazomethane, bis (2-naphthylsulfonyl) diazomethane, 4-methylphenylsulfonylbenzoyldiazomethane, tert-butylcarbonyl-4- Methylphenylsulfonyldiazomethane, 2-naphthylsulfonylbenzoyldiazomethane, 4-methylphenylsulfonyl2-naphthoyldiazomethane, methylsulfonylbenzoyldiazomethane, tert-butoxycarbo 4-methylphenylsulfonyl diazo-bis-sulfonyl methane such as diazo methane may be mentioned as sulfonyl carbonyl diazomethane.
[311] Examples of the N-sulfonyloxydicarboxyimide-type photoacid generator include succinimide, naphthalenedicarboxyimide, phthalic imide, cyclohexyldicarboxyimide, 5-norbornene-2,3-dicarboxyimide, and 7-oxabi Imide skeletons such as cyclo [2.2.1] -5-heptene-2,3-dicarboxyimide, trifluoromethanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2, 2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, mesitylenesulfonate, 2,4,6-triisopropylbenzenesulfo The compound which combined the nitrate, toluene sulfonate, benzene sulfonate, naphthalene sulfonate, camphor sulfonate, octane sulfonate, dodecyl benzene sulfonate, butane sulfonate, methane sulfonate, etc. is mentioned.
[312] As a benzoin sulfonate-type photo-acid generator, benzoin tosylate, benzoin mesylate, benzoin butane sulfonate, etc. are mentioned.
[313] As the pyrogallol trisulfonate type photoacid generator, all of the hydroxyl groups of pyrogallol, fluoroglycine, catechol, resorcinol, and hydroquinone may be substituted with trifluoromethanesulfonate, nonafluorobutanesulfonate, and heptadecafluorooctane. Sulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4-fluorobenzenesulfonate, toluenesulfonate, benzenesulfonate, naphthalene The compound substituted by sulfonate, camphor sulfonate, an octane sulfonate, dodecylbenzene sulfonate, butane sulfonate, methane sulfonate, etc. are mentioned.
[314] As a nitrobenzyl sulfonate type photo-acid generator, 2, 4- dinitro benzyl sulfonate, 2-nitro benzyl sulfonate, 2, 6- dinitro benzyl sulfonate is mentioned, As a sulfonate, a trifluoro specifically, is mentioned. Methanesulfonate, nonafluorobutanesulfonate, heptadecafluorooctanesulfonate, 2,2,2-trifluoroethanesulfonate, pentafluorobenzenesulfonate, 4-trifluoromethylbenzenesulfonate, 4 -Fluorobenzene sulfonate, toluene sulfonate, benzene sulfonate, naphthalene sulfonate, camphor sulfonate, octane sulfonate, dodecylbenzene sulfonate, butane sulfonate, methane sulfonate, and the like. Moreover, the compound which substituted the nitro group of the benzyl side by the trifluoromethyl group can also be used similarly.
[315] Examples of the sulfone type photoacid generator include bis (phenylsulfonyl) methane, bis (4-methylphenylsulfonyl) methane, bis (2-naphthylsulfonyl) methane, 2,2-bis (phenylsulfonyl) propane, 2, 2-bis (4-methylphenylsulfonyl) propane, 2,2-bis (2-naphthylsulfonyl) propane, 2-methyl-2- (p-toluenesulfonyl) propiophenone, 2- (cyclohexylcarbonyl ) -2- (p-toluenesulfonyl) propane, 2,4-dimethyl-2- (p-toluenesulfonyl) pentan-3-one, etc. are mentioned.
[316] Examples of glyoxime derivative type photoacid generators include bis-O- (p-toluenesulfonyl) -α-dimethylglyoxime, bis-O- (p-toluenesulfonyl) -α-diphenylglyoxime and bis-O -(p-toluenesulfonyl) -α-dicyclohexylglyoxime, bis-O- (p-toluenesulfonyl) -2,3-pentanedioneglyoxime, bis-O- (p-toluenesulfonyl)- 2-methyl-3,4-pentanedioneglyoxime, bis-O- (n-butanesulfonyl) -α-dimethylglyoxime, bis-O- (n-butanesulfonyl) -α-diphenylglyoxime, Bis-O- (n-butanesulfonyl) -α-dicyclohexylglyoxime, bis-O- (n-butanesulfonyl) -2,3-pentanedioneglyoxime, bis-O- (n-butanesul Ponyl) -2-methyl-3,4-pentanedioneglyoxime, bis-O- (methanesulfonyl) -α-dimethylglyoxime, bis-O- (trifluoromethanesulfonyl) -α-dimethylglyoxime , Bis-O- (1,1,1-trifluoroethanesulfonyl) -α-dimethylglyoxime, bis-O- (tert-butanesulfonyl) -α-dimethylglyoxime, bis-O- (purple Luorooctanesulfonyl) -α-dimethylglyox , Bis-O- (cyclohexylsulfonyl) -α-dimethylglyoxime, bis-O- (benzenesulfonyl) -α-dimethylglyoxime, bis-O- (p-fluorobenzenesulfonyl) -α- Dimethylglyoxime, bis-O- (p-tert-butylbenzenesulfonyl) -α-dimethylglyoxime, bis-O- (xylenesulfonyl) -α-dimethylglyoxime, bis-O- (camphorsulfonyl) -alpha-dimethylglyoxime etc. are mentioned.
[317] In addition, U.S. Patent No. 6004724, U.S. Patent 6262,382, Japanese Patent Application Laid-Open No. 9-95479, Japanese Patent Application Laid-Open No. 9-208554, Japanese Patent Application Laid-Open No. 9-230588, and Japanese Patent Application The compound described in 2906999, Unexamined-Japanese-Patent No. 9-301948, Unexamined-Japanese-Patent No. 2000-314956, and Unexamined-Japanese-Patent No. 2001-233842 (patent documents 1-9) can also be used.
[318] Especially, as a photo-acid generator used preferably, a sulfonium salt, bissulfonyl diazomethane, N-sulfonyloxy dicarboxyimide is mentioned. Specifically, triphenylsulfonium p-toluenesulfonate, triphenylsulfonium camphorsulfonate, triphenylsulfonium pentafluorobenzenesulfonate, triphenylsulfonium nonafluorobutanesulfonate, and triphenylsulfonium 4- ( 4'-toluenesulfonyloxy) benzenesulfonate, triphenylsulfonium, 2,4,6-triisopropylbenzenesulfonate, 4-tert-butoxyphenyldiphenylsulfonium p-toluenesulfonate, 4-tert -Butoxyphenyldiphenylsulfonium camphorsulfonate, 4-tert-butoxyphenyldiphenylsulfonium 4- (4'-toluenesulfonyloxy) benzenesulfonate, tris (4-methylphenyl) sulfonium, camphorsulfonate , Tris (4-tert-butylphenyl) sulfonium camphorsulfonate, bis (tert-butylsulfonyl) diazomethane, bis (cyclohexylsulfonyl) diazomethane, bis (2,4-dimethylphenylsulfonyl) Diazomethane, bis (4-tert-butylphenylsulfonyl) diazomethane, N-camphorsulfonyloxy-5-norbornene-2,3-carboxylic acid , N-p- toluenesulfonyloxy-5-norbornene-2,3-carboxylic acid imide, etc. may be mentioned.
[319] The amount of the photoacid generator (C) other than the component (B) in the chemically amplified resist material of the present invention may be added as long as it does not interfere with the effect of the O-arylsulfonyl oxime compound of the present invention. It is 0-10 weight part, Preferably it is 0-5 weight part in 100 weight part of solid content in material. When the ratio of the photo-acid generator (C) is too large, there is a possibility that a problem of foreign matters occurs in deterioration of resolution or development / resist stripping. The said photo-acid generator (C) can be used individually or in mixture of 2 or more types. Moreover, the transmittance | permeability in a resist film can also be controlled with the addition amount using the photo-acid generator with low transmittance | permeability in an exposure wavelength.
[320] Moreover, the compound (acid propagation compound) which decomposes | dissolves with an acid and produces | generates an acid can also be added to the resist material which uses the O-arylsulfonyl oxime compound of this invention as a photo-acid generator. For these compounds, see J. Photopolym. Sci. and Tech., 8, 43-44, 45-46 (1995), J. Photopolym. Sci. and Tech., 9. 29-30 (1996).
[321] Examples of the acid propagation compound include tert-butyl-2-methyl-2-tosyloxymethylacetoacetate, 2-phenyl2- (2-tosyloxyethyl) 1,3-dioxolane, and the like, but are not limited to these. Do not. Among known photoacid generators, compounds having poor stability, particularly thermal stability, often exhibit acid propagating compound properties.
[322] The addition amount of the acid-proliferating compound in the resist material of the present invention is 2 parts by weight or less, preferably 1 part by weight or less, in 100 parts by weight of the solid content in the resist material. Deterioration and pattern shape deterioration occur.
[323] As the basic compound of the component (D), a compound capable of suppressing the diffusion rate when the acid generated from the photoacid generator diffuses into the resist film is suitable. The acid diffusion rate in the resist film is compounded by blending such a basic compound. Can be suppressed, the resolution can be improved, and the change in sensitivity after exposure can be suppressed, or the exposure margin, pattern profile, and the like can be improved by reducing the substrate and environment dependency.
[324] As such a basic compound, primary, secondary, tertiary aliphatic amines, hybrid amines, aromatic amines, heterocyclic amines, nitrogen-containing compounds having a carboxyl group, nitrogen-containing compounds having a sulfonyl group, nitrogen-containing compounds having a hydroxyl group, and hydroxides Nitrogen-containing compounds having an oxyphenyl group, alcoholic nitrogen-containing compounds, amide derivatives, imide derivatives and the like.
[325] Specifically, as primary aliphatic amines, ammonia, methylamine, ethylamine, n-propylamine, isopropylamine, n-butylamine, isobutylamine, sec-butylamine, tert-butylamine, pentylamine, tert- Amylamine, cyclopentylamine, hexylamine, cyclohexylamine, heptylamine, octylamine, nonylamine, decylamine, dodecylamine, cetylamine, methylenediamine, ethylenediamine, tetraethylenepentamine and the like are exemplified, and secondary As aliphatic amines, dimethylamine, diethylamine, di-n-propylamine, diisopropylamine, di-n-butylamine, diisobutylamine, di-sec-butylamine, dipentylamine, dicyclopentylamine , Dihexylamine, dicyclohexylamine, diheptylamine, dioctylamine, dinonylamine, didecylamine, didodecylamine, dicetylamine, N, N-dimethylmethylenediamine, N, N-dimethylethylenediamine, N, N-dimethyl tetraethylene pentamine, etc. are illustrated, and a tertiary aliphatic amine Trimethylamine, triethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-sec-butylamine, tripentylamine, tricyclopentylamine, tri Hexylamine, tricyclohexylamine, triheptylamine, trioctylamine, trinonylamine, tridecylamine, tridodecylamine, tricetylamine, N, N, N ', N'-tetramethylmethylenediamine, N, N, N ', N'-tetramethylethylenediamine, N, N, N', N'-tetramethyltetraethylenepentamine, etc. are illustrated.
[326] In addition, examples of the mixed amines include dimethylethylamine, methylethylpropylamine, benzylamine, phenethylamine, benzyldimethylamine, and the like. Specific examples of aromatic amines and heterocyclic amines include aniline derivatives (for example, aniline, N-methylaniline, N-ethylaniline, N-propylaniline, N, N-dimethylaniline, 2-methylaniline, 3-methylaniline, 4-methylaniline, ethylaniline, propylaniline, trimethylaniline, 2-nitroaniline, 3-nitroaniline, 4-nitroaniline, 2,4-dinitroaniline, 2,6-dinitroaniline, 3,5-di Nitroaniline, N, N-dimethyltoluidine, etc.), diphenyl (p-tolyl) amine, methyldiphenylamine, triphenylamine, phenylenediamine, naphthylamine, diaminonaphthalene, pyrrole derivatives (e.g. pyrrole, 2H-pyrrole, 1-methylpyrrole, 2,4-dimethylpyrrole, 2,5-dimethylpyrrole, N-methylpyrrole and the like), oxazole derivatives (e.g. oxazole, isoxazole, etc.), thiazole derivatives ( For example, thiazole, isothiazole, etc.), imidazole derivatives (for example, imidazole, 4-methylimidazole, 4-methyl-2-phenylimidazole, etc.), p Lazole derivatives, furazane derivatives, pyrroline derivatives (e.g. pyrroline, 2-methyl-1-pyrroline, etc.), pyrrolidine derivatives (e.g. pyrrolidine, N-methylpyrrolidine, pyrrolidinone , N-methylpyrrolidone, etc.), imidazoline derivatives, imidazolidine derivatives, pyridine derivatives (e.g. pyridine, methylpyridine, ethylpyridine, propylpyridine, butylpyridine, 4- (1-butylpentyl) pyridine , Dimethylpyridine, trimethylpyridine, triethylpyridine, phenylpyridine, 3-methyl-2-phenylpyridine, 4-tert-butylpyridine, diphenylpyridine, benzylpyridine, methoxypyridine, butoxypyridine, dimethoxypyridine, 1 -Methyl-2-pyridine, 4-pyrrolidinopyridine, 1-methyl-4-phenylpyridine, 2- (1-ethylpropyl) pyridine, aminopyridine, dimethylaminopyridine and the like), pyridazine derivatives, pyrimidine derivatives, Pyrazine derivatives, pyrazoline derivatives, pyrazolidine derivatives, piperidine derivatives, piperazine derivatives, mother Lepoline derivatives, indole derivatives, isoindole derivatives, 1H-indazole derivatives, indolin derivatives, quinoline derivatives (e.g. quinoline, 3-quinolinecarbonitrile, etc.), isoquinoline derivatives, cinnoline derivatives, quinazoline derivatives, quinox Saline derivatives, phthalazine derivatives, purine derivatives, pteridine derivatives, carbazole derivatives, phenanthrizine derivatives, acridine derivatives, phenadine derivatives, 1,10-phenanthroline derivatives, adenine derivatives, adenosine derivatives, guanine Derivatives, guanosine derivatives, uracil derivatives, uridine derivatives and the like.
[327] Examples of the nitrogen-containing compound having a carboxyl group include aminobenzoic acid, indolecarboxylic acid, and amino acid derivatives (for example, nicotinic acid, alanine, arginine, aspartic acid, glutamic acid, glycine, histidine, isoleucine, glycylleucine, leucine, and methionine). , Phenylalanine, threonine, lysine, 3-aminopyrazine-2-carboxylic acid, methoxyalanine and the like), and the like, and examples of the nitrogen-containing compound having a sulfonyl group include 3-pyridine sulfonic acid and p-toluene sulfonic acid pyridinium. As the nitrogen-containing compound having a hydroxyl group, the nitrogen-containing compound having a hydroxyphenyl group, and the alcoholic nitrogen-containing compound, 2-hydroxypyridine, aminocresol, 2,4-quinolinediol, 3-indolmethanol hydrate, monoethanolamine , Diethanolamine, triethanolamine, N-ethyldiethanolamine, N, N-diethylethanolamine, triisopropanolamine, 2,2'-imino diethanol, 2- Aminoethanol, 3-amino-1-propanol, 4-amino-1-butanol, 4- (2-hydroxyethyl) morpholine, 2- (2-hydroxyethyl) pyridine, 1- (2-hydroxyethyl Piperazine, 1- [2- (2-hydroxyethoxy) ethyl] piperazine, piperidineethanol, 1- (2-hydroxyethyl) pyrrolidine, 1- (2-hydroxyethyl)- 2-pyrrolidinone, 3-piperidino-1,2-propanediol, 3-pyrrolidino-1,2-propanediol, 8-hydroxyurolidine, 3-quinuclidinol, 3-tropanol , 1-methyl-2-pyrrolidineethanol, 1-aziridineethanol, N- (2-hydroxyethyl) phthalimide, N- (2-hydroxyethyl) isonicotinamide, and the like. Examples of the amide derivatives include formamide, N-methylformamide, N, N-dimethylformamide, acetamide, N-methylacetamide, N, N-dimethylacetamide, propionamide, benzamide and the like. Phthalimide, succinimide, maleimide, etc. are illustrated as an imide derivative.
[328] Moreover, 1 type, or 2 or more types chosen from the basic compound represented by following formula (8a) can also be mix | blended.
[329] N (X ') _w (Y) _3-w
[330] In formula, w is 1, 2 or 3, Y respectively independently represents a hydrogen atom or a linear, branched or cyclic C1-C20 alkyl group, It may contain a hydroxyl group or an ether structure, X 'is Each independently represents a group represented by the following formulas X'1 to X'3, and two or three X 'may combine to form a ring.
[331] <Formula X'1>
[332] -R ³⁰⁰ -OR ³⁰¹
[333] <Formula X'2>
[334]
[335] <Formula X'3>
[336]
[337] In formula, R <^300> , R <^302> and R <^305> represent a C1-C4 linear or branched alkylene group, and R <^301> , R <^304> and R <^306> represent a hydrogen atom or a C1-C20 linear or branched phase Or a cyclic alkyl group, and may include one or more hydroxy groups, ether structures, ester structures or lactone rings, and R ³⁰³ represents a single bond or a linear or branched alkylene group having 1 to 4 carbon atoms.
[338] Specific examples of the basic compound represented by the formula (8a) include tris (2-methoxymethoxyethyl) amine, tris {2- (2-methoxyethoxy) ethyl} amine, and tris {2- (2-methoxy Ethoxymethoxy) ethyl} amine, tris {2- (1-methoxyethoxy) ethyl} amine, tris {2- (1-ethoxyethoxy) ethyl} amine, tris {2- (1-ethoxy Propoxy) ethyl} amine, tris [2- {2- (2-hydroxyethoxy) ethoxy} ethyl] amine, 4,7,13,16,21,24-hexaoxa-1,10-diazabi Cyclo [8.8.8] hexacoic acid, 4,7,13,18-tetraoxa-1,10-diazabicyclo [8.5.5] eichoic acid, 1,4,10,13-tetraoxa-7,16- Diazabicyclooctadecane, 1-aza-12-crown-4,1-aza-15-crown-5,1-aza-18-crown-6, tris (2-formyloxyethyl) amine, tris (2 -Acetoxyethyl) amine, tris (2-propionyloxyethyl) amine, tris (2-butyryloxyethyl) amine, tris (2-isobutyryloxyethyl) amine, tris (2- valeryloxyethyl) Amine, Lis (2-pivaloyloxyethyl) amine, N, N-bis (2-acetoxyethyl) 2- (acetoxyacetoxy) ethylamine, tris (2-methoxycarbonyloxyethyl) amine, tris ( 2-tert-butoxycarbonyloxyethyl) amine, tris [2- (2-oxopropoxy) ethyl] amine, tris [2- (methoxycarbonylmethyl) oxyethyl] amine, tris [2- (tert -Butoxycarbonylmethyloxy) ethyl] amine, tris [2- (cyclohexyloxycarbonylmethyloxy) ethyl] amine, tris (2-methoxycarbonylethyl) amine, tris (2-ethoxycarbonyl Ethyl) amine, N, N-bis (2-hydroxyethyl) 2- (methoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (methoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (ethoxycarbonyl) ethylamine, N, N- Bis (2-hydroxyethyl) 2- (2-methoxyethoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (2-methoxyethoxy Carbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-hydroxyethoxycarbonyl) ethylamine, N, N-bis (2-acetoxyethyl) 2- (2- Acetoxyethoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-acetoxyethyl ) 2-[(methoxycarbonyl) methoxycarbonyl] ethylamine, N, N-bis (2-hydroxyethyl) 2- (2-oxopropoxycarbonyl) ethylamine, N, N-bis ( 2-acetoxyethyl) 2- (2-oxopropoxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N- Bis (2-acetoxyethyl) 2- (tetrahydrofurfuryloxycarbonyl) ethylamine, N, N-bis (2-hydroxyethyl) 2-[(2-oxotetrahydrofuran-3-yl) oxy Carbonyl] ethylamine, N, N-bis (2-acetoxyethyl) 2-[(2-oxotetrahydrofuran-3-yl) oxycarbonyl] ethylamine, N, N-bis (2-hydroxy Ethyl) 2- (4- Doxybutoxycarbonyl) ethylamine, N, N-bis (2-formyloxyethyl) 2- (4-formyloxybutoxycarbonyl) ethylamine, N, N-bis (2-formyloxy Ethyl) 2- (2-formyloxyethoxycarbonyl) ethylamine, N, N-bis (2-methoxyethyl) 2- (methoxycarbonyl) ethylamine, N- (2-hydroxyethyl) Bis [2- (methoxycarbonyl) ethyl] amine, N- (2-acetoxyethyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-hydroxyethyl) bis [2- (Ethoxycarbonyl) ethyl] amine, N- (2-acetoxyethyl) bis [2- (ethoxycarbonyl) ethyl] amine, N- (3-hydroxy-1-propyl) bis [2- ( Methoxycarbonyl) ethyl] amine, N- (3-acetoxy-1-propyl) bis [2- (methoxycarbonyl) ethyl] amine, N- (2-methoxyethyl) bis [2- (methoxy Methoxycarbonyl) ethyl] amine, N-butylbis [2- (methoxycarbonyl) ethyl] amine, N-butylbis [2- (2-methoxyethoxycarbonyl) ethyl] amine, N-methylbis (2-acetoxyethyl) amine, N-ethylbis (2-acetoxy Tyl) amine, N-methylbis (2-pivaloyloxyethyl) amine, N-ethylbis [2- (methoxycarbonyloxy) ethyl] amine, N-ethylbis [2- (tert-butoxycar Carbonyloxy) ethyl] amine, tris (methoxycarbonylmethyl) amine, tris (ethoxycarbonylmethyl) amine, N-butylbis (methoxycarbonylmethyl) amine, N-hexylbis (methoxycarbonyl Methyl) amine, (beta)-(diethylamino) -delta-valerolactone, etc. can be illustrated.
[339] Moreover, 1 type, or 2 or more types chosen from the basic compound which has a cyclic structure represented by following formula (8b) can also be mix | blended.
[340]
[341] In formula, X 'is the same as the above, R <^307> is a C2-C20 linear, branched alkylene group, and may contain one or more carbonyl group, ether structure, ester structure, or sulfide structure.
[342] Specific examples of the basic compound having a cyclic structure represented by the above formula (8b) include 1- [2- (methoxymethoxy) ethyl] pyrrolidine and 1- [2- (methoxymethoxy) ethyl] piperidine , 4- [2- (methoxymethoxy) ethyl] morpholine, 1- [2-[(2-methoxyethoxy) methoxy] ethyl] pyrrolidine, 1- [2-[(2-methoxy Methoxyethoxy) methoxy] ethyl] piperidine, 4- [2-[(2-methoxyethoxy) methoxy] ethyl] morpholine, acetic acid 2- (1-pyrrolidinyl) ethyl, acetic acid2- Piperidinoethyl, acetic acid 2-morpholinoethyl, formic acid 2- (1-pyrrolidinyl) ethyl, propionic acid 2-piperidinoethyl, acetoxyacetic acid 2-morpholinoethyl, methoxyacetic acid 2- (1 -Pyrrolidinyl) ethyl, 4- [2- (methoxycarbonyloxy) ethyl] morpholine, 1- [2- (t-butoxycarbonyloxy) ethyl] piperidine, 4- [2- ( 2-methoxyethoxycarbonyloxy) ethyl] morpholine, 3- (1-pyrrolidinyl) methyl propionate, 3-piperidinopropionate methyl, 3-morpholinoprop Methyl onion, 3- (thiomorpholino) methyl propionate, 2-methyl-3- (1-pyrrolidinyl) methyl propionate, 3-morpholinopropionate ethyl, 3-piperidinopropionate methoxycarbonylmethyl, 3- (1-Pyrrolidinyl) propionic acid 2-hydroxyethyl, 3-morpholinopropionic acid 2-acetoxyethyl, 3- (1-pyrrolidinyl) propionic acid 2-oxotetrahydrofuran-3-yl, 3 Morpholinopropionate tetrahydrofurfuryl, 3-piperidinopropionate glycidyl, 3-morpholinopropionic acid 2-methoxyethyl, 3- (1-pyrrolidinyl) propionic acid 2- (2-methoxye Oxy) ethyl, 3-morpholinopropionate, 3-piperidino propionate cyclohexyl, α- (1-pyrrolidinyl) methyl-γ-butyrolactone, β-piperidino-γ-butyrolactone, β-morpholino-δ-valerolactone, 1-pyrrolidinyl acetate, methyl piperidinoacetic acid, morpholino acetate, methyl thiomorpholinoacetic acid, 1- Pyrrolidinyl acetate, morpholino acetate 2-methoxyethyl, etc. are mentioned.
[343] Moreover, 1 type, or 2 or more types chosen from the basic compound which has a cyano group represented by the following general formula (8c-8f) can also be mix | blended.
[344] (X ') _3-w- N- (R ³⁰⁸ -CN) _w
[345]
[346]
[347]
[348] In the formula, X ', R ³⁰⁷ and w are the same as above, and R ³⁰⁸ and R ³⁰⁹ are each independently a linear or branched alkylene group having 1 to 4 carbon atoms.
[349] Examples of the basic compound having a cyano group represented by Chemical Formulas 8c to 8f include 3- (diethylamino) propiononitrile, N, N-bis (2-hydroxyethyl) -3-aminopropiononitrile, N, N-bis (2-acetoxyethyl) -3-aminopropiononitrile, N, N-bis (2-formyloxyethyl) -3-aminopropiononitrile, N, N-bis (2-meth Methoxyethyl) -3-aminopropiononitrile, N, N-bis [2- (methoxymethoxy) ethyl] -3-aminopropiononitrile, N- (2-cyanoethyl) -N- (2- Methoxyethyl) -3-methylaminopropionate, N- (2-cyanoethyl) -N- (2-hydroxyethyl) -3-methylaminopropionate, N- (2-acetoxyethyl) -N- ( 2-Cyanoethyl) -3-aminopropionate, N- (2-cyanoethyl) -N-ethyl-3-aminopropiononitrile, N- (2-cyanoethyl) -N- (2-hydrate Oxyethyl) -3-aminopropiononitrile, N- (2-acetoxyethyl) -N- (2-cyanoethyl) -3-aminopropiononitrile, N- ( 2-cyanoethyl) -N- (2-formyloxyethyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N- (2-methoxyethyl) -3-aminopropiono Nitrile, N- (2-cyanoethyl) -N- [2- (methoxymethoxy) ethyl] -3-aminopropiononitrile, N- (2-cyanoethyl) -N- (3-hydroxy -1-propyl) -3-aminopropiononitrile, N- (3-acetoxy-1-propyl) -N- (2-cyanoethyl) -3-aminopropiononitrile, N- (2-cyano Ethyl) -N- (3-formyloxy-1-propyl) -3-aminopropiononitrile, N- (2-cyanoethyl) -N-tetrahydrofurfuryl-3-aminopropiononitrile, N, N-bis (2-cyanoethyl) -3-aminopropiononitrile, diethylaminoacetonitrile, N, N-bis (2-hydroxyethyl) aminoacetonitrile, N, N-bis (2-acetoxy Ethyl) aminoacetonitrile, N, N-bis (2-formyloxyethyl) aminoacetonitrile, N, N-bis (2-methoxyethyl) aminoacetonitrile, N, N-bis [2- (methoxy Metok Ethyl] aminoacetonitrile, N-cyanomethyl-N- (2-methoxyethyl) -3-aminopropionate, N-cyanomethyl-N- (2-hydroxyethyl) -3-aminopropionic acid Methyl, N- (2-acetoxyethyl) -N-cyanomethyl-3-aminopropionate, N-cyanomethyl-N- (2-hydroxyethyl) aminoacetonitrile, N- (2-acetoxy Ethyl) -N- (cyanomethyl) aminoacetonitrile, N-cyanomethyl-N- (2-formyloxyethyl) aminoacetonitrile, N-cyanomethyl-N- (2-methoxyethyl) amino Acetonitrile, N-cyanomethyl-N- [2- (methoxymethoxy) ethyl] aminoacetonitrile, N- (cyanomethyl) -N- (3-hydroxy-1-propyl) aminoacetonitrile, N- (3-acetoxy-1-propyl) -N- (cyanomethyl) aminoacetonitrile, N-cyanomethyl-N- (3-formyloxy-1-propyl) aminoacetonitrile, N, N -Bis (cyanomethyl) aminoacetonitrile, 1-pyrrolidine propiononitrile, 1-piperidine propiononini Reel, 4-morpholine propiononitrile, 1-pyrrolidineacetonitrile, 1-piperidine acetonitrile, 4-morpholine acetonitrile, 3-diethylaminopropionate cyanomethyl, N, N-bis (2 -Hydroxyethyl) -3-aminopropionate cyanomethyl, N, N-bis (2-acetoxyethyl) -3-aminopropionate cyanomethyl, N, N-bis (2-formyloxyethyl) -3 Cyanomethyl aminopropionate, N, N-bis (2-methoxyethyl) -3-aminopropionate cyanomethyl, N, N-bis [2- (methoxymethoxy) ethyl] -3-aminopropionate Aminomethyl, 3-diethylaminopropionic acid (2-cyanoethyl), N, N-bis (2-hydroxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis (2- Acetoxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis (2-formyloxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis (2 -Methoxyethyl) -3-aminopropionic acid (2-cyanoethyl), N, N-bis [2- (methoxymethoxy) Tyl] -3-aminopropionic acid (2-cyanoethyl), 1-pyrrolidine propanoic acid cyanomethyl, 1-piperidine propionate cyanomethyl, 4-morpholine propionate cyanomethyl, 1-pyrrolidine propionic acid (2-cyanoethyl), 1-piperidine propionic acid (2-cyanoethyl), 4-morpholine propionic acid (2-cyanoethyl), etc. are illustrated.
[350] In addition, a basic compound can be used individually by 1 type or in combination of 2 or more types, It is preferable that the compounding quantity mixed 0-2 weight part, especially 0.01-1 weight part among 100 weight part of solid content in a resist material. When a compounding quantity exceeds 2 weight part, a sensitivity may fall large.
[351] Examples of the organic acid derivative as the component (E) include, but are not particularly limited to, phenol, cresol, catechol, resorcinol, pyrogallol, fluoroglycine, bis (4-hydroxyphenyl) methane, and 2,2-bis. (4'-hydroxyphenyl) propane, bis (4-hydroxyphenyl) sulfone, 1,1,1-tris (4'-hydroxyphenyl) ethane, 1,1,2-tris (4'-hydroxy Phenyl) ethane, hydroxybenzophenone, 4-hydroxyphenylacetic acid, 3-hydroxyphenylacetic acid, 2-hydroxyphenylacetic acid, 3- (4-hydroxyphenyl) propionic acid, 3- (2-hydroxyphenyl) Propionic acid, 2,5-dihydroxyphenylacetic acid, 3,4-dihydroxyphenylacetic acid, 1,2-phenylenediacetic acid, 1,3-phenylenediacetic acid, 1,4-phenylenediacetic acid, 1 , 2-phenylenedioxydiacetic acid, 1,4-phenylenedipropanoic acid, benzoic acid, salicylic acid, 4,4-bis (4'-hydroxyphenyl) valeric acid, 4-tert-butoxyphenylacetic acid, 4- (4 -Hydroxyphenyl) butyric acid, 3,4-dihydrate Symantec mandelic acid, only the 4-hydroxy-mandelic acid, etc. may be mentioned. Among them, salicylic acid, 4,4-bis (4'-hydroxyphenyl) valeric acid are preferred. These can be used individually or in combination of 2 or more types.
[352] The addition amount of the organic acid derivative in the chemically amplified resist material of the present invention is 5 parts by weight or less, preferably 1 part by weight or less in 100 parts by weight of the solid content in the resist material. When the amount added is more than 5 parts by weight, there is a possibility that the resolution is degraded. In addition, this organic acid derivative may not be added by combination of the composition in a resist.
[353] As an organic solvent which is (F) component, butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl, methyl ethyl ketone, methyl amyl ketone, cyclohexanone, cyclopentanone, 3-ethoxyethyl propionate , 3-ethoxymethylpropionate, 3-methoxymethylpropionate, methyl acetoacetate, ethyl acetoacetate, diacetone alcohol, methyl pyruvate, ethyl pyruvate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene Glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 3-methyl-3-meth Oxybutanol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, propylene glycol methyl ether acetate Propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, tetramethylene sulfone, and the like, but are not limited thereto. Especially preferred are propylene glycol alkyl ether acetates and lactic acid alkyl esters. These solvents may be used alone or in combination of two or more. Examples of preferred mixed solvents are propylene glycol alkyl ether acetates and lactic acid alkyl esters. Moreover, although the alkyl group of the propylene glycol alkyl ether acetate in this invention has a C1-C4 thing, for example, a methyl group, an ethyl group, a propyl group, etc. are mentioned, Especially, a methyl group and an ethyl group are preferable. In addition, this propylene glycol alkyl ether acetate has 1, 2 substituents, and 1,3 substituents, and although there exist three types of isomers by combination of substitution positions, any of single or mixed may be sufficient.
[354] Moreover, although the alkyl group of the said lactic acid alkyl ester has a C1-C4 thing, for example, a methyl group, an ethyl group, a propyl group, etc. are mentioned, Especially, a methyl group and an ethyl group are preferable.
[355] When adding propylene glycol alkyl ether acetate as a solvent, it is preferable to set it as 50 weight% or more with respect to a total solvent, and when adding lactic acid alkylester, it is preferable to set it as 50 weight% or more with respect to a total solvent. Moreover, when using the mixed solvent of propylene glycol alkyl ether acetate and the lactic acid alkyl ester as a solvent, it is preferable that the total amount is 50 weight% or more with respect to a total solvent.
[356] The amount of these solvents added is 300 to 2,000 parts by weight, preferably 400 to 1,000 parts by weight with respect to 100 parts by weight of the solid content of the chemically amplified resist material, but is not limited thereto as long as the concentration is possible in the conventional film production method.
[357] As a compound having a molecular weight of 3,000 or less (dissolution inhibiting agent) whose solubility in an alkaline developer changes due to the action of the acid (G), part or all of a low molecular weight phenol or carboxylic acid derivative having a molecular weight of 2,500 or less is a substituent unstable to an acid. The compound substituted by may be added.
[358] Examples of the phenol or carboxylic acid derivative having a molecular weight of 2,500 or less include bisphenol A, bisphenol H, bisphenol S, 4,4-bis (4'-hydroxyphenyl) valeric acid, tris (4-hydroxyphenyl) methane, and 1,1. , 1-tris (4'-hydroxyphenyl) ethane, 1,1,2-tris (4'-hydroxyphenyl) ethane, phenolphthalein, thymolphthalein, and the like. Examples of the acid labile substituent include Examples of the acid labile group may be mentioned again.
[359] Examples of the dissolution inhibiting agent that are preferably used include bis (4- (2'-tetrahydropyranyloxy) phenyl) methane, bis (4- (2'-tetrahydrofuranyloxy) phenyl) methane and bis (4- tert-butoxyphenyl) methane, bis (4-tert-butoxycarbonyloxyphenyl) methane, bis (4-tert-butoxycarbonylmethyloxyphenyl) methane, bis (4- (1'-ethoxye Methoxy) phenyl) methane, bis (4- (1'-ethoxypropyloxy) phenyl) methane, 2,2-bis (4 '-(2' '-tetrahydropyranyloxy)) propane, 2,2- Bis (4 '-(2' '-tetrahydrofuranyloxy) phenyl) propane, 2,2-bis (4'-tert-butoxyphenyl) propane, 2,2-bis (4'-tert-butoxy Carbonyloxyphenyl) propane, 2,2-bis (4-tert-butoxycarbonylmethyloxyphenyl) propane, 2,2-bis (4 '-(1' '-ethoxyethoxy) phenyl) propane, 2,2-bis (4 '-(1' '-ethoxypropyloxy) phenyl) propane, 4,4-bis (4'-(2 ''-tetrahydropyranyloxy) phenyl) valeric acid tertbutyl, 4,4-bis (4 '-(2' '-tetrahydro) Ranyloxy) phenyl) valeric acid tertbutyl, 4,4-bis (4'-tert-butoxyphenyl) valeric acid tertbutyl, 4,4-bis (4-tert-butoxycarbonyloxyphenyl) valeric acid tert Butyl, 4,4-bis (4'-tert-butoxycarbonylmethyloxyphenyl) valeric acid tertbutyl, 4,4-bis (4 '-(1' '-ethoxyethoxy) phenyl) valeric acid tert Butyl, 4,4-bis (4 '-(1' '-ethoxypropyloxy) phenyl) valeric acid tertbutyl, tris (4- (2'-tetrahydropyranyloxy) phenyl) methane, tris (4- (2'-tetrahydrofuranyloxy) phenyl) methane, tris (4-tert-butoxyphenyl) methane, tris (4-tert-butoxycarbonyloxyphenyl) methane, tris (4-tert-butoxycar Bonyloxymethylphenyl) methane, tris (4- (1'-ethoxyethoxy) phenyl) methane, tris (4- (1'-ethoxypropyloxy) phenyl) methane, 1,1,2-tris (4 ' -(2'-tetrahydropyranyloxy) phenyl) ethane, 1,1,2-tris (4 '-(2' '-tetrahydrofuranyloxy) phenyl) ethane, 1,1,2-tris (4 '-tert-butoxyphenyl) Ethane, 1,1,2-tris (4'-tert-butoxycarbonyloxyphenyl) ethane, 1,1,2-tris (4'-tert-butoxycarbonylmethyloxyphenyl) ethane, 1,1 , 2-tris (4 '-(1'-ethoxyethoxy) phenyl) ethane, 1,1,2-tris (4'-(1'-ethoxypropyloxy) phenyl) ethane and the like.
[360] As addition amount of the dissolution inhibitor (G) in the resist material of this invention, it is 20 weight part or less in 100 weight part of solid content in a resist material, Preferably it is 15 weight part or less. If it is more than 20 parts by weight, the monomer component increases, so that the heat resistance of the resist material is lowered.
[361] In the O-arylsulfonyl oxime compound of the present invention, a photoacid generator which generates the chemical formula 1d by exposure, or a photoacid generator represented by the chemical formulas 1, 1a, 1b, and 1c is used for chemically amplifying negative resist material. Although it can use as a generator and is not limited to the example of alkali-soluble resin of (H) component, the intermediate of the said (A) component is mentioned. For example, poly p-hydroxystyrene, poly m-hydroxystyrene, poly4-hydroxy2-methylstyrene, poly4-hydroxy-3-methylstyrene, polyα-methyl p-hydroxystyrene, part Hydrogenated poly p-hydroxystyrene copolymer, poly (p-hydroxystyrene-α-methyl p-hydroxystyrene) copolymer, poly (p-hydroxystyrene-α-methylstyrene) copolymer, poly (p -Hydroxystyrene-styrene) copolymer, poly (p-hydroxystyrene-m-hydroxystyrene) copolymer, poly (p-hydroxystyrene-styrene) copolymer, poly (p-hydroxystyrene-acrylic acid) Copolymer, poly (p-hydroxystyrene-methacrylic acid) copolymer, poly (p-hydroxystyrene-methylacrylate) copolymer, poly (p-hydroxystyrene-acrylic acid-methylmethacrylate) copolymer , Poly (p-hydroxystyrene-methylacrylate) copolymer, poly (p-hydroxystyrene-methacrylic acid-methylmeth Acrylate) copolymer, polymethacrylic acid, polyacrylic acid, poly (acrylic acid-methylacrylate) copolymer, poly (methacrylic acid-methylmethacrylate) copolymer, poly (acrylic acid-maleimide) copolymer, poly (Methacrylic acid-maleimide) copolymer, poly (p-hydroxystyrene-acrylic acid-maleimide) copolymer, poly (p-hydroxystyrene-methacrylic acid-maleimide) copolymer, and the like, It is not limited to these combinations.
[362] Preferably, poly p-hydroxystyrene, partially hydrogenated poly p-hydroxystyrene copolymer, poly (p-hydroxystyrene-styrene) copolymer, poly (p-hydroxystyrene-acrylic acid) copolymer, poly (p-hydroxystyrene-methacrylic acid) copolymer is mentioned.
[363] In particular, alkali-soluble resin containing the following repeating unit 2, 2b, 2c, 2d is preferable.
[364] <Formula 2>
[365]
[366] <Formula 2b>
[367]
[368] <Formula 2c>
[369]
[370] <Formula 2d>
[371]
[372] In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, x is 0 or a positive integer, y is a positive integer, and x + is a number satisfying y≤5, M and N are positive integers, 0 <N / (M + N) ≤0.5, yy is 0 or a positive integer, and x + yy≤4 A, B are positive integers, C is 0 or a positive integer, 0 <B / (A + B + C) ≤ 0.5, ZZ is CH ₂ , CH (OH ), A divalent organic group selected from CR ⁵ (OH), C═O, C (OR ⁵ ), (OH), or a trivalent organic group represented by —C (OH) =, and F is different from each other, or May be the same, is a positive integer, H is a positive integer, H / (H + F) = 0.001 to 0.1, and XX is 1 or 2.
[373] As for a molecular weight, 3,000-100,000 are preferable at a weight average molecular weight, and when it is less than 3,000, performance as a polymer falls, heat resistance falls, film formation is often insufficient, and when it exceeds 100,000, since molecular weight is too big, Problems arise such as solubility, solubility in a resist solvent. Moreover, dispersion degree is 3.5 or less, Preferably it is 1.5 or less. If the degree of dispersion is greater than 3.5, resolution often deteriorates. Although it does not specifically limit in a manufacturing method, A low dispersibility (narrow dispersibility) polymer can be synthesize | combined by using living anion polymerization for poly-p-hydroxy styrene.
[374] Moreover, in order to have various functions, a substituent may be introduce | transduced into a part of phenolic hydroxyl group and carboxyl group of the said acid labile group protection polymer. For example, a substituent for improving the adhesion to the substrate or a substituent for improving the etching resistance, in particular, a relatively stable substituent in the acid or alkali for controlling so that the dissolution rate in the alkali developer of the unexposed portion and the low exposed portion is not too high. It is desirable to. Examples of the substituent include, for example, 2-hydroxyethyl group, 2-hydroxypropyl group, methoxymethyl group, methoxycarbonyl group, ethoxycarbonyl group, methoxycarbonylmethyl group, ethoxycarbonylmethyl group, 4-methyl-2 -Oxo-4-oxolanyl group, 4-methyl-2-oxo-4-oxanyl group, methyl group, ethyl group, n-propyl group, iso-propyl group, n-butyl group, sec-butyl group, acetyl group, p Although a baloyl group, an adamantyl group, an isoboroyl group, a cyclohexyl group, etc. are mentioned, It is not limited to these. Further, acid-decomposable substituents such as t-butoxycarbonyl groups, t-butyl groups and t-butoxycarbonylmethyl groups can be introduced.
[375] Although it is arbitrary as the addition amount of the said resin in the resist material of this invention, it is 65-99 weight part in 100 weight part of solid content in a resist, Preferably it is 65-98 weight part.
[376] Moreover, as an acid crosslinking agent which forms a crosslinked structure by the action of the acid which is (I) component, the compound which has a 2 or more hydroxymethyl group, an alkoxymethyl group, an epoxy group, or a vinyl ether group in a molecule | numerator is mentioned, A substituted glycouryl derivative, Urea derivatives, hexa (methoxymethyl) melamine, and the like are preferably used as the acid crosslinking agent of the chemically amplified negative resist material of the present invention. For example, N, N, N ', N'-tetramethoxymethylurea and hexamethoxymethylmelamine, tetrahydroxymethyl substituted glycolurils and tetraalkoxymethyl substituted glycolurils such as tetramethoxymethylglycoluril, And condensates such as phenolic compounds such as substituted and unsubstituted bis-hydroxymethylphenols and bisphenol A, and epichlorohydrin. Particularly preferred crosslinking agents are 1,3,5,7-tetraalkoxymethylglycoluril or 1,3,5,7-tetrahydroxymethylglycoluril, such as 1,3.5,7-tetramethoxymethylglycoluril, 2,6 -Dihydroxymethyl p-cresol, 2,6-dihydroxymethylphenol, 2,2 ', 6,6'-tetrahydroxymethyl-bisphenol A and 1,4-bis- [2- (2-hydroxy Oxypropyl)]-benzene, N, N, N ', N'-tetramethoxymethylurea, hexamethoxymethylmelamine, etc. are mentioned. The addition amount is optional but is 1 to 20 parts by weight, preferably 5 to 15 parts by weight of 100 parts by weight of solids in the resist material. These crosslinking agents may be used alone or in combination of two or more.
[377] Moreover, it is although it does not specifically limit as alkali-soluble compound of molecular weight 2,500 or less which is (J) component, It is preferable to have two or more phenol groups and / or carboxyl groups. Specifically, cresol, catechol, resorcinol, pyrogallol, fluoroglycine, bis (4-hydroxyphenyl) methane, 2,2-bis (4'-hydroxyphenyl) propane, bis (4-hydroxy Phenyl) sulfone, 1,1,1-tris (4'-hydroxyphenyl) ethane, 1,1,2-tris (4'-hydroxyphenyl) ethane, hydroxybenzophenone, 4-hydroxyphenylacetic acid, 3-hydroxyphenylacetic acid, 2-hydroxyphenylacetic acid, 3- (4-hydroxyphenyl) propionic acid, 3- (2-hydroxyphenyl) propionic acid, 2,5-dihydroxyphenylacetic acid, 3,4- Dihydroxyphenylacetic acid, 1,2-phenylene diacetic acid, 1,3-phenylene diacetic acid, 1,4-phenylene diacetic acid, 1,2-phenylenedioxy diacetic acid, 1,4-phenylenedipropanoic acid , Benzoic acid, salicylic acid, 4,4-bis (4'-hydroxyphenyl) valeric acid, 4-tert-butoxyphenylacetic acid, 4- (4-hydroxyphenyl) butyric acid, 3,4-dihydroxymandelic acid , 4-hydroxymandelic acid, and the like , Valeric acid, 4,4-bis (4'-hydroxyphenyl) being preferred. These can be used individually or in combination of 2 or more types. The addition amount is optional but is 0 to 20 parts by weight, preferably 2 to 10 parts by weight, among 100 parts by weight of solids in the resist material.
[378] In the chemically amplified resist material of the present invention, additives such as surfactants for improving applicability and light absorbing materials for reducing diffuse reflection from the substrate can be added.
[379] Although it does not specifically limit as an example of surfactant, Polyoxyethylene alkyl ethers, such as polyoxyethylene lauryl ether, polyoxyethylene stearyl ether, polyoxyethylene cetyl ether, polyoxyethylene olein ether, polyoxyethylene octylphenol Sorbitan fatty acids such as polyoxyethylene alkylallyl ethers such as ether and polyoxyethylene nonylphenol ether, polyoxyethylene polyoxypropylene block copolymers, sorbitan monolaurate, sorbitan monopalmitate and sorbitan monostearate Polyesters such as esters, polyoxyethylene sorbitan monolaurate, polyoxyethylene sorbitan monopalmitate, polyoxyethylene sorbitan monostearate, polyoxyethylene sorbitan trioleate, polyoxyethylene sorbitan tristearate Oxyethylene Sorbitan Fatty Acids Terionic nonionic surfactant, F-top EF301, EF303, EF352 (Tochem Products), Megapack F171, F172, F173 (Dainitbon Ink Chemical Co., Ltd.), Flowride FC430, FC431 (Sumitomo 3M), Asahi Guard AG710 Arsenic systems, such as Supron S-381, S-382, SC101, SC102, SC103, SC104, SC105, SC106, Sufinol E1004, KH-10, KH-20, KH-30, KH-40 (Asahi Glass) Surfactant, organosiloxane polymer KP341, X-7O-092, X-7O-093 (Shin-Etsu Chemical Co., Ltd.), acrylic acid or methacrylic acid polyflow N0.75, N0.95 (Kyoesha Yushiga) The high school). Among them, FC430, Suffron S-381, Sufinol E1004, KH-20, and KH-30 are preferable. These can be used individually or in combination of 2 or more types.
[380] As addition amount of surfactant in the chemically amplified resist material of this invention, it is 2 weight part or less in 100 weight part of solid content in a resist material composition, Preferably it is 1 weight part or less.
[381] In addition, an ultraviolet absorber can be mix | blended with the chemically amplified resist material of this invention. Although it does not specifically limit, What is described in Unexamined-Japanese-Patent No. 11-190904 can be used, Preferably bis (4-hydroxyphenyl) sulfoxide, bis (4-tert- butoxyphenyl) sulfoxide, Diaryl sulfoxide derivatives such as bis (4-tert-butoxycarbonyloxyphenyl) sulfoxide, bis [4- (1-ethoxyethoxy) phenyl] sulfoxide, bis (4-hydroxyphenyl) sulfone, Bis (4-tert-butoxyphenyl) sulfone, bis (4-tert-butoxycarbonyloxyphenyl) sulfone, bis [4- (1-ethoxyethoxy) phenyl] sulfone, bis [4- (1- Diazo compounds such as diaryl sulfone derivatives such as ethoxypropoxy) phenyl] sulfone, benzoquinone diazide, naphthoquinone diazide, anthraquinone diazide, diazofluorene, diazotetrarone, diazophenanthrone and the like , Full or partial ester compound of naphthoquinone-1,2-diazide-5-sulfonic acid chloride with 2,3,4-trihydroxybenzophenone, naphthoquinone-1,2-diazide 9-anthracenecarboxylic acid tert-butyl, 9-anthracenecarboxylic acid, such as quinonediazide group containing compounds, such as a full or partial ester compound of the 4-sulfonic acid chloride and 2,4,4'- trihydroxy benzophenone Acids tert-amyl, 9-anthracenecarboxylic acid tert-methoxymethyl, 9-anthracenecarboxylic acid tert-ethoxyethyl, 9-anthracenecarboxylic acid 2-tert-tetrahydropyranyl, 9-anthracenecarboxylic acid 2-tert-tetrahydrofuranyl etc. are mentioned. Although the compounding quantity of the said ultraviolet absorber may be added or not added according to the kind of resist material, when it adds, it is 0-10 weight part of 100 weight part of base resin, More preferably, it is 0.5-10 weight part, Preferably it is 1-5 weight part.
[382] In the O-arylsulfonyl oxime compound of the present invention, a chemically amplified resist material having a photoacid generator which generates the chemical formula 1d by exposure or a photoacid generator represented by the chemical formulas 1, 1a, 1b and 1c Although it does not specifically limit when using for integrated circuit manufacture, A well-known lithography technique can be used.
[383] Appropriate application of spin coating, roll coating, flow coating, dip coating, spray coating, doctor coating, etc. on substrates for integrated circuit manufacturing (Si, SiO ₂ , SiN, SiON, TiN, WSi, BPSG, SOG, organic antireflective films, etc.) It apply | coats so that a coating film thickness may be 0.1-2.0 micrometers by the method, and it prebakes on 60-150 degreeC, 1 to 10 minutes, Preferably it is 80-120 degreeC and 1 to 5 minutes on a hotplate. Subsequently, the target pattern is exposed through a predetermined mask at a light source selected from ultraviolet rays, far ultraviolet rays, electron beams, X-rays, excimer lasers, Rays, synchrotron radiation, and the like, preferably at an exposure wavelength of 300 nm or less.
[384] Among these, more preferable light sources include excimer lasers, particularly KrF excimer lasers and far ultraviolet rays of 245 to 255 nm. The exposure amount is preferably exposed to about 1 to 200 mJ / cm ² , preferably about 10 to 100 mJ / cm ² . Post exposure bake (PEB) on a hot plate at 60 to 150 ° C. for 1 to 5 minutes, preferably at 80 to 120 ° C. for 1 to 3 minutes.
[385] Further, the dip method is performed for 0.1 to 3 minutes, preferably 0.5 to 2 minutes, using a developing solution of an aqueous alkali solution such as 0.1 to 5%, preferably 2 to 3% tetramethylammonium hydroxide (TMAH). The target pattern can be formed on a board | substrate by developing by conventional methods, such as a puddle method and the spray method. In addition, the material of the present invention is particularly suitable for fine patterning by far ultraviolet rays of 254 to 193 nm, vacuum ultraviolet rays of 157 nm, electron beams, X-rays, excimer lasers, γ-rays, and synchrotron radiation. In addition, when it deviates from the upper limit and the lower limit of the said range, the target pattern may not be obtained.
[386] <Example>
[387] Hereinafter, although a synthesis example and an Example are shown and this invention is demonstrated concretely, this invention is not limited to the following.
[388] Synthesis Example 1 Synthesis of 4- (4'-methylphenylsulfonyloxy) benzenesulfonate
[389] 208 g (1.0 mole) of 4-phenolsulfonic acid hydrate and 191 g (1.0 mole) of p-toluenesulfonic acid chloride were dissolved in 400 g of tetrahydrofuran and 250 g of water. The solution of sodium hydroxide (80 g (2.0 mol) of sodium hydroxide and 125 g of water) was dripped at the temperature which does not exceed 20 degreeC, continuing stirring under ice cooling, and after completion | finish of dripping, it aged at room temperature for 2 hours. 700 g of dichloromethane was added to the reaction solution, and crystals obtained by crystallizing sodium 4- (4'-methylphenylsulfonyloxy) benzenesulfonate were filtered, and the crystals were washed with 200 g of dichloromethane and decompressed at 60 ° C for 12 hours. Dried. Quantity 330 g (yield 94%).
[390] Synthesis Example 2 Synthesis of 2,5-bis (4'-methylphenylsulfonyloxy) benzenesulfonate
[391] 2,5-bis (4'-methylphenylsulfonyloxy) benzene was prepared in the same manner as in Synthesis Example 1 except that 1.0 mol of potassium hydroquinone sulfonate was used instead of phenol sulfonic acid and 2.5 mol of p-toluene sulfonic acid chloride was used. Sodium sulfonate was synthesized.
[392] Synthesis Example 3 Synthesis of 6- (4'-methylphenylsulfonyloxy) naphthalene-2-sulfonate
[393] 50 g (0.18 mol) of 2,6-naphthol sulfonate hydrate and 33.8 g (0.18 mol) of p-toluenesulfonic acid chloride were dissolved in 100 g of tetrahydrofuran and 80 g of water. The solution of sodium hydroxide (7.1 g (0.18 mol) and 30 g of water) was dripped at the temperature which does not exceed 20 degreeC, stirring continuously under ice cooling, and it aged at room temperature for 2 hours after completion | finish of dripping. 600 g of dichloromethane was added to the reaction solution, and crystals obtained by crystallizing sodium 6- (4'-methylphenylsulfonyloxy) naphthalene-2-sulfonate were filtered, and the crystals were washed with 300 g of dichloromethane and washed at 60 ° C. It dried under reduced pressure for 12 hours. Yield 62 g (yield 86%).
[394] Synthesis Example 4 Synthesis of 4- (4'-methylphenylsulfonyloxy) naphthalene-1-sulfonate
[395] 25 g (0.09 mol) of 1,4-naphthol sulfonate hydrate and 16.8 g (0.09 mol) of p-toluenesulfonic acid chloride were dissolved in 59 g of tetrahydrofuran and 23 g of water. The solution of sodium hydroxide (3.5 g (0.09 mol) of sodium hydroxide and 27 g of water) was added dropwise at a temperature not exceeding 20 ° C while stirring was continued under ice cooling, and the mixture was aged at room temperature for 2 hours after completion of dropping. 700 g of dichloromethane was added to the reaction solution, crystals obtained by crystallization of sodium 4- (4'-methylphenylsulfonyloxy) naphthalene-1-sulfonate were filtered, and the crystals were washed with 300 g of dichloromethane and washed at 60 ° C. It dried under reduced pressure for 12 hours. Quantity 30 g (yield 83%).
[396] Synthesis Example 5 Synthesis of 8- (4'-methylphenylsulfonyloxy) naphthalene-1-sodium sulfonate
[397] 12.3 g (0.05 mol) of 1,8-naphthol sulfonate hydrate and 9.5 g (0.05 mol) of p-toluenesulfonic acid chloride were dissolved in 24 g of tetrahydrofuran and 11 g of water. The sodium hydroxide aqueous solution (2 g (0.05 mol) of sodium hydroxide and 9 g of water) was dripped at the temperature which does not exceed 20 degreeC, stirring continuously under ice cooling, and after completion | finish of dripping, it aged at room temperature for 2 hours. 100 g of dichloromethane was added to the reaction solution, crystals obtained by crystallization of sodium 8- (4'-methylphenylsulfonyloxy) naphthalene-1-sulfonate were filtered, and the crystals were washed with 300 g of dichloromethane and washed at 60 ° C. It dried under reduced pressure for 12 hours. Yield 17 g (85% yield).
[398] Synthesis Example 6 Synthesis of 3-methoxy-4- (4'-methylphenylsulfonyloxy) benzenesulfonate
[399] 50 g (0.2 mol) of potassium guiacol sulfonate hydrate and 38 g (0.2 mol) of p-toluenesulfonic acid chloride were dissolved in 80 g of tetrahydrofuran and 65 g of water. An aqueous sodium hydroxide solution (8 g (0.2 mol) of sodium hydroxide and 15 g of water) was added dropwise at a temperature not exceeding 20 ° C while stirring was continued under ice cooling, and the mixture was aged at room temperature for 2 hours after completion of dropping. 200 g of dichloromethane was added to the reaction solution, crystals obtained by crystallization of sodium 3-methoxy-4- (4'-methylphenylsulfonyloxy) benzenesulfonate were filtered, and the crystals were washed with 200 g of dichloromethane to obtain 60 g. It dried under reduced pressure at 12 degreeC. Yield 72 g (yield 94% as Na salt).
[400] In addition, although the obtained crystal may be a mixture of a sodium salt and potassium salt, it can be removed as sodium ion and potassium ion by the halogenation reaction which is the next process, and was used for the next reaction, without refine | purifying in particular.
[401] Synthesis Example 7 Synthesis of 4- (4'-methylphenylsulfonyloxy) benzenesulfonylchloride
[402] 20 g (0.057 mol) of sodium 4- (4'-methylphenylsulfonyloxy) benzenesulfonate described in Synthesis Example 1 was dispersed in 80 g of carbon tetrachloride, and the stirring was continued under ice-cooling. To this suspension 23.8 g (0.114 mol) of phosphorus pentachloride were added at a temperature not exceeding 20 ° C. It stirred under ice cooling for 1 hour, and then stirred at room temperature for 12 hours. After aging, the reaction solution was poured into 150 g of ice water, and the separated white oil was extracted with 100 g of dichloromethane, then dried over anhydrous magnesium sulfate, and filtered. The solvent was distilled off under reduced pressure to obtain 15.9 g of white crystals (yield 81%).
[403] <Synthesis Examples 8-13>
[404] The same procedure as in Synthesis Example 7 was repeated except that the arylsulfonyloxyarylsulfonate salts according to Synthesis Examples 2 to 6 were used instead of the 4- (4'-methylphenylsulfonyloxy) benzenesulfonate sodium described in Synthesis Example 7. Phonylchloride was synthesized.
[405] Synthesis Example 8
[406] 2,5-bis (4'-methylphenylsulfonyloxy) benzenesulfonylchloride
[407] Synthesis Example 9
[408] 6- (4'-methylphenylsulfonyloxy) naphthalene-2-sulfonylchloride
[409] Synthesis Example 10
[410] 4- (4'-methylphenylsulfonyloxy) naphthalene-1-sulfonylchloride
[411] Synthesis Example 11
[412] 8- (4'-methylphenylsulfonyloxy) naphthalene-1-sulfonylchloride
[413] Synthesis Example 12
[414] 3-methoxy-4- (4'-methylphenylsulfonyloxy) benzenesulfonylchloride
[415] Synthesis Example 13
[416] 3-methyl-4- (4'-methylphenylsulfonyloxy) benzenesulfonylchloride
[417] Synthesis Example 14 Synthesis of (5- (4- (4-methylphenylsulfonyloxy) phenylsulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[418] (5-hydroxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl) -acetonitrile and 4- (4'-methylphenylsulfonyloxy) benzenesulfonylchloride of Synthesis Example 7 It synthesize | combined as described in 6,004,724 (patent document 1), and obtained the target object. The measurement values of nuclear magnetic resonance spectrum (NMR) and infrared absorption spectrum (IR) of the obtained compound were described. Although the obtained compound may be an isomer (2 types) of the following structure, when judging from the obtained spectrum, either was one single product.
[419]
[420]
[421] Synthesis Example 15 2,2,2-trifluoro-1- (4- (3- (4- (2,2,2-trifluoro-1- (4- (4-methylphenylsulfonyloxy)) Synthesis of Phenylsulfonyloxyimino) -ethyl) -phenoxy) -propoxy) -phenyl) ethanone oxime (4- (4-methylphenylsulfonyloxy) phenylsulfonate)
[422] The target object was synthesize | combined by the method of Unexamined-Japanese-Patent No. 2000-314956 (patent document 8) from the corresponding oxime compound and 4- (4'-methylphenylsulfonyloxy) benzenesulfonyl chloride synthesize | combined by the synthesis example 7. It was. The measurement values of the nuclear magnetic resonance spectrum (NMR) and the infrared absorption spectrum (IR) of the obtained compound were described.
[423]
[424] Synthesis Example 16 Synthesis of Bis (O-4- (4-methylphenylsulfonyloxy) phenylsulfonyl) dimethylglyoxime
[425] The target object was synthesize | combined from the dimethylglyoxime and 4- (4'-methylphenylsulfonyloxy) benzenesulfonyl chloride of the synthesis example 7 by the method of Unexamined-Japanese-Patent No. 2906999 (patent document 6). The measurement values of nuclear magnetic resonance spectrum (NMR) and infrared absorption spectrum (IR) of the obtained compound were described.
[426]
[427] <Synthesis Examples 17-34>
[428] Except for using the sulfonyl chloride synthesized in Synthesis Examples 8 to 13 instead of 4- (4'-methylphenylsulfonyloxy) benzenesulfonylchloride used in Synthesis Examples 14 to 16, it was the same as the Synthesis Examples 14 to 16 Was synthesized.
[429] Synthesis Example 17
[430] (5- (2,5-bis (4-methylphenylsulfonyloxy) benzenesulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[431] Synthesis Example 18
[432] 2,2,2-trifluoro-1- (4- (3- (4- (2,2,2-trifluoro-1- (2,5-bis (4-methylphenylsulfonyloxy) benzenesulfonate Phenyloxy) phenylsulfonyloxyimino) -ethyl) -phenoxy) -propoxy) -phenyl) ethanone oxime (2,5-bis (4-methylphenylsulfonyloxy) benzenesulfonyloxy) phenylsulfonate)
[433] Synthesis Example 19
[434] Bis (O-2,5-bis (4-methylphenylsulfonyloxy) benzenesulfonyl) dimethylglyoxime
[435] Synthesis Example 20
[436] (5- (6- (4-methylphenylsulfonyloxy) naphthalene-2-sulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[437] Synthesis Example 21
[438] 2,2,2-trifluoro-1- (4- (3- (4- (2,2,2-trifluoro-1- (6- (4-methylphenylsulfonyloxy) naphthalene-2-sul Phenyloxy) phenylsulfonyloxyimino) -ethyl) -phenoxy) -propoxy) -phenyl) ethanone oxime (6- (4-methylphenylsulfonyloxy) naphthalene-2-sulfonyloxy) phenylsulfonate)
[439] Synthesis Example 22
[440] Bis (O-6- (4-methylphenylsulfonyloxy) naphthalene-2-sulfonyl) dimethylglyoxime
[441] Synthesis Example 23
[442] (5- (4- (4-methylphenylsulfonyloxy) naphthalene-1-sulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[443] Synthesis Example 24
[444] 2,2,2-trifluoro-1- (4- (3- (4- (2,2,2-trifluoro-1- (4- (4-methylphenylsulfonyloxy) naphthalene-1-sul Phenyloxy) phenylsulfonyloxyimino) -ethyl) -phenoxy) propoxy) -phenyl) ethanone oxime (4- (4-methylphenylsulfonyloxy) naphthalene-1-sulfonyloxy) phenylsulfonate)
[445] Synthesis Example 25
[446] Bis (O-4- (4-methylphenylsulfonyloxy) naphthalene-1-sulfonyl) dimethylglyoxime
[447] Synthesis Example 26
[448] (5- (8- (4-methylphenylsulfonyloxy) naphthalene-1-sulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[449] Synthesis Example 27
[450] 2,2,2-trifluoro-1- (4- (3- (4- (2.2,2-trifluoro-1- (8- (4-methylphenylsulfonyloxy) naphthalene-1-sulfonyloxy ) Phenylsulfonyloxyimino) -ethyl) -phenoxy) -propoxy) -phenyl) ethanone oxime (4- (4-methylphenylsulfonyloxy) naphthalene-1-sulfonyloxy) phenylsulfonate)
[451] Synthesis Example 28
[452] Bis (O-8- (4-methylphenylsulfonyloxy) naphthalene-1-sulfonyl) dimethylglyoxime
[453] Synthesis Example 29
[454] (5- (3-methoxy-4- (4-methylphenylsulfonyloxy) benzenesulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[455] Synthesis Example 30
[456] 2,2,2-trifluoro-1- (4- (3- (4- (2,2,2-trifluoro-1- (3-methoxy-4- (4-methylphenylsulfonyloxy)) Benzenesulfonyloxy) phenylsulfonyloxyimino) -ethyl) -phenoxy) -propoxy) -phenyl) ethanone oxime (3-methoxy-4- (4-methylphenylsulfonyloxy) benzenesulfonyloxy) phenyl Sulfonates)
[457] Synthesis Example 31
[458] Bis (O-3-methoxy-4- (4-methylphenylsulfonyloxy) benzenesulfonyl) dimethylglyoxime
[459] Synthesis Example 32
[460] (5- (3-methyl-4- (4-methylphenylsulfonyloxy) benzenesulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[461] Synthesis Example 33
[462] 2,2,2-trifluoro-1- (4- (3- (4- (2,2,2-trifluoro-1- (3-methyl-4- (4-methylphenylsulfonyloxy) benzene Sulfonyloxy) phenylsulfonyloxyimino) -ethyl) -phenoxy) -propoxy) -phenyl) ethanone oxime (3-methyl-4- (4-methylphenylsulfonyloxy) benzenesulfonyloxy) phenylsulfonate )
[463] Synthesis Example 34
[464] Bis (O-3-methyl-4- (4-methylphenylsulfonyloxy) benzenesulfonyl) dimethylglyoxime
[465] Synthesis Example 35 Synthesis of 2- (4- (4-methylphenylsulfonyloxy) phenylsulfonyloxyimino) -2-phenylacetonitrile
[466] 1.46 g (0.01 mol) of 2-hydroxyimino-2-phenylacetonitrile manufactured by Aldrich Inc. and 3.47 g (0.01 mol) of 4-(-methylphenylsulfonyloxy) benzenesulfonyl chloride prepared in Synthesis Example 7 It was dissolved in 11 g of furan. 1.01 g (1.46 ml, 0.01 mol) of triethylamine was dripped at room temperature, and it stirred at room temperature for 1 hour further. 30 g of water was added to the reaction solution, and the organic layer was separated. 30 g of dichloromethane and 25 g of water were added to the organic layer, and the organic layer was washed. The organic layer was concentrated using a rotary evaporator, and recrystallization was performed by adding 22 g of methanol to 8 g of the concentrate. This crystal was filtered and dried to obtain 3.7 g (yield 81%) of the desired 2- (4- (4-methylphenylsulfonyloxy) phenylsulfonyloxyimino) -2-phenylacetonitrile. The measurement value of the nuclear magnetic resonance spectrum (NMR) and the infrared absorption spectrum (IR) of the obtained compound was shown.
[467]
[468] <Example, Comparative Example>
[469] The resist material shown in Tables 1-3 was produced. Here, the components of the resist materials listed in Tables 1 to 3 are as follows.
[470] Polymer A: The polymer of the weight average molecular weight 12,000 which protected each hydroxyl group of poly p-hydroxystyrene by 15 mol% of 1-ethoxyethyl groups, and 15 mol% of tert-butoxycarbonyl groups.
[471] Polymer B: The polymer of the weight average molecular weight 12,000 which protected 30 mol% of 1-ethoxyethyl groups the hydroxyl group of poly p-hydroxy styrene.
[472] Polymer C: The polymer of the weight average molecular weight 11,000 which protected each hydroxyl group of poly p-hydroxy styrene by 15 mol% of 1-ethoxyethyl groups, and 10 mol% of tert-butoxycarbonyl groups.
[473] Polymer D: The polymer of the weight average molecular weight 13,000 which bridge | crosslinked the hydroxyl group of poly p-hydroxystyrene by 25 mol% of 1-ethoxyethyl group, and 3 mol% with 1, 2- propanediol divinyl ether.
[474] Polymer E: A polymer having a weight average molecular weight of 12,000 in which a hydroxyl group of poly p-hydroxystyrene was protected by 25 mol% of tert-butoxycarbonyl group.
[475] Polymer F: A copolymer of p-hydroxystyrene and 2-ethyl-2-adamantyl acrylate, having a composition ratio (molar ratio) of 70:30 and a weight average molecular weight of 15,000.
[476] Polymer G: A copolymer of p-hydroxystyrene and 1-ethyl-1-norbornene methacrylate, having a composition ratio (molar ratio) of 70:30 and a weight average molecular weight of 15,000.
[477] Polymer H: A copolymer of p-hydroxystyrene and tert-butyl acrylate, having a composition ratio (molar ratio) of 65:35 and a weight average molecular weight of 15,000.
[478] Polymer I: A copolymer of p-hydroxystyrene and 1-ethylcyclopentyl methacrylate, having a composition ratio (molar ratio) of 65:35 and a weight average molecular weight of 15,00.
[479] Polymer J: A copolymer of p-hydroxystyrene, 1-ethylcyclopentyl methacrylate and styrene, having a composition ratio (molar ratio) of 65:10:25 and a weight average molecular weight of 12,000.
[480] Polymer K: A polymer having a weight average molecular weight of 10,000, wherein a copolymer of p-hydroxystyrene and indene has a composition ratio (molar ratio) of 80:20 and a hydroxyl group of hydroxystyrene, protected by 20% of a tert-butoxycarbonyl group.
[481] Polymer L: A polymer of p-hydroxystyrene, indene and 1-ethyl-1-norbornene methacrylate, having a composition ratio (molar ratio) of 70:10:20 and a weight average molecular weight of 10,000.
[482] Polymer M: A copolymer of p-hydroxystyrene, indene and 1-ethyl-1-norbornene methacrylate, having a composition ratio (molar ratio) of 70:15:15 and a weight average molecular weight of 10,000.
[483] Polymer N: The polymer of the weight average molecular weight 8,000 which protected the hydroxyl group of poly p-hydroxy styrene by 8 mol% of acetyl groups.
[484] PAG 1: Compound of Synthesis Example 14
[485] PAG 2: Compound of Synthesis Example 15
[486] PAG 3: Compound of Synthesis Example 16
[487] PAG 4: triphenylsulfonium 4- (4-methylphenyl) sulfonyloxybenzenesulfonate
[488] PAG 5: (4-tert-butoxyphenyl) diphenylsulfonium 10-camphorsulfonate
[489] PAG 6: bis (cyclohexylsulfonyl) diazomethane
[490] PAG 7: bis (2,4-dimethylphenylsulfonyl) diazomethane
[491] PAG 8: (5- (lO-camphorsulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[492] PAG 9: (5- (4-methylphenylsulfonyloxy) imino-5H-thiophen-2-ylidene)-(2-methylphenyl) -acetonitrile
[493] Crosslinking agent: 1,3,5,7-tetramethoxymethylglycoluril
[494] Dissolution Inhibitors: Bis (4- (2'-tetrahydropyranyloxy) phenyl) methane
[495] Basic Compound A: Tri n-butylamine
[496] Basic Compound B: Tris (2-methoxyethyl) amine
[497] Organic acid derivative A: 4,4-bis (4'-hydroxyphenyl) valeric acid
[498] Organic acid derivative B: salicylic acid
[499] Surfactant A: FC-430 (made by Sumitomo 3M Corporation)
[500] Surfactant B: Supron S-381 (made by Asahi Glass)
[501] UV absorbers: 9,10-dimethylanthracene
[502] Solvent A: Propylene Glycol Methyl Ether Acetate
[503] Solvent B: ethyl lactate
[504] After filtering the obtained resist material with a 0.2 micrometer Teflon (trademark) filter, this resist liquid was spin-coated on the silicon wafer which apply | coated the organic anti-reflective film (DUV-44 by Brewer Science Co., Ltd.) at 800 kPa, It was applied at 0.6 mu m. The coater developer Cleantrack Mark 8 made by Tokyo Electron Co., Ltd. was used for coating | coating, the following baking, and image development operation.
[505] Then, this silicon wafer was baked for 90 seconds on a 100 degreeC hotplate. Furthermore, using an excimer laser stepper (NSR-S202A NA = 0.6, Nikon Corporation), it exposed through 2/3 wheel illumination and baked for 90 second (PEB: post exposure bake) at 110 degreeC. When developing with a 2.38% aqueous tetramethylammonium hydroxide solution, positive patterns (Examples 1 to 23, Comparative Examples 1 to 3) or negative patterns (Example 24) were obtained.
[506] The obtained resist pattern was evaluated as follows.
[507] How to evaluate resist pattern:
[508] The exposure amount which resolves the upper part and the lower part of the 0.18 micrometer line and space by 1: 1 as optimal exposure amount (sensitivity: Eop), and the minimum line width of the line and space separated by this exposure amount was made into the resolution of an evaluation resist. In addition, the resist cross section was observed for the shape of the resolved resist pattern using a scanning electron microscope. When the focus is changed, it is effective to keep the resist pattern shape rectangular while maintaining the film thickness of the resist pattern (compared with the case where the focus is correct), thereby providing a depth of focus. ) Was measured.
[509] In addition, the PED stability of the resist was subjected to post exposure bake (PEB) after exposure for 24 hours at the optimum exposure dose, and evaluated as a variation in line width. The smaller this variation, the higher the PED stability.
[510] The resist pattern evaluation results are shown in Table 4.
[511] Evaluation methods other than pattern evaluation:
[512] The solubility of the resist material into the mixed solvent was judged by visual observation and the presence or absence of clogging during filtration.
[513] The coating properties were visually observed and the variation of the film thickness on the same wafer using a film thickness measuring instrument and a film thickness measuring instrument (manufactured by Dainippon Screen Wash, Optical Interferometry, Lambda S VM-3010). If the thickness is 0.6% or less (within 0.003 µm), the thickness is 0.6.
[514] The storage stability was judged by the precipitation or change in sensitivity of the foreign material in the change over time. The foreign material was five particles having a particle size of 0.3 μm or more contained in 1 ml of a resist solution with a particle counter (KL-20A, manufactured by LION Corporation) for up to 100 days. The thing below or the change of the time-dependent change of a sensitivity (Eop mentioned above) immediately after manufacture was made into less than 5%, and the more was described as bad.
[515] The foreign material appearing on the pattern after development was judged using a scanning electron microscope (TDSEM: manufactured by Hitachi Sesakusho Co., S-7280H), and it was good when the number of foreign objects observed visually within 100 square μm was 10 or less. Slightly bad when more than 15 pieces, and bad when 16 or more.
[516] The foreign material after resist peeling was judged using Surf Scan (Tencol Instruments Co., Surf Scan 6220). The resist wafer exposed to the whole surface without pattern exposure was processed by a conventional process, developed with 2.38% of tetramethylammonium hydroxide aqueous solution, and peeling of the resist was performed (resist stripping only the exposed part). On the 8-inch wafer after resist stripping, the marks were marked as good when there were 100 or less foreign matters of 0.20 μm or more, slightly bad when 101 or more and 150 or less, and bad when 151 or more.
[517] The above results are shown in Table 5.
[518]
[519]
[520]
[521]
[522]
[523] The photoacid generator of the O-arylsulfonyl oxime compound which produces | generates arylsulfonyloxyaryl sulfonic acid by the high energy ray irradiation of this invention, and the chemically amplified resist material using the same are arylsulfonyloxyaryl in O-aryl sulfonyl oxime. Containing sulfonyl group, it has excellent resolution and focus margin, it has little line width fluctuation and shape deterioration even when PED over a long time, excellent pattern profile shape after development, and high resolution suitable for fine processing, especially raw Extremely powerful in ultraviolet lithography.

权利要求:
Claims (18)
[1" claim-type="Currently amended] A photoacid generator for a chemically amplified resist material represented by the following formula (1).
<Formula 1>

In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, k is an integer from 0 to 4, G' and G '' are sulfur atoms, respectively Or -CH = CH-, but at the same time does not represent a sulfur atom.
[2" claim-type="Currently amended] A photoacid generator for a chemically amplified resist material represented by the following general formula (1a).
<Formula 1a>

In formula, R may be same or different, and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or an alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, EWG is a cyano group, a nitro group, or a perfluoroalkyl group having 1 to 3 carbon atoms P represents a linear, branched or cyclic substituted or unsubstituted alkyl group having 1 to 10 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 12 carbon atoms.
[3" claim-type="Currently amended] A photoacid generator for a chemically amplified resist material represented by the following general formula (1b).
<Formula 1b>

In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, EWG is a cyano group, a nitro group, or a perfluoroalkyl group having 1 to 3 carbon atoms Q represents a linear, branched or cyclic substituted or unsubstituted alkylene group having 1 to 10 carbon atoms, or a substituted or unsubstituted arylene group having 6 to 18 carbon atoms.
[4" claim-type="Currently amended] A photoacid generator for a chemically amplified resist material represented by the following formula (1c).
<Formula 1c>

In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer from 0 to 4, r 'is an integer from 0 to 5, G is a hydrogen atom, linear, branched or cyclic substitution of 1 to 10 carbon atoms Alternatively, an unsubstituted alkyl group, a substituted or unsubstituted aryl group having 6 to 12 carbon atoms, or two G's may be bonded to each other to form a ring structure with the carbon atom to which these G bonds.
[5" claim-type="Currently amended] As an O-arylsulfonyl oxime compound, a chemically amplified resist material which generates arylsulfonyloxyarylsulfonic acid represented by the following general formula (1d) by ultraviolet rays, deep ultraviolet rays, electron beams, X-rays, excimer lasers, γ-rays, or synchrotron irradiation. Dragon mine generator.
<Formula 1d>

In formula, R may be same or different and represents a hydrogen atom, a fluorine atom, a chlorine atom, a nitro group, or a C1-C12 linear, branched or cyclic substituted or unsubstituted alkyl group or alkoxy group, n is 0 or 1, m is 1 or 2, r is an integer of 0-4, r 'is an integer of 0-5.
[6" claim-type="Currently amended] (A) a resin whose solubility in an alkaline developer is changed by the action of an acid,
(B) The photoacid generator according to any one of claims 1 to 5.
Chemically amplified resist material comprising a.
[7" claim-type="Currently amended] (A) a resin whose solubility in an alkaline developer is changed by the action of an acid,
(B) The photoacid generator according to any one of claims 1 to 5.
A chemically amplified positive resist material comprising a.
[8" claim-type="Currently amended] The resist material of Claim 6 or 7 which further contains the compound which generate | occur | produces an acid by irradiation other than the said (B) component.
[9" claim-type="Currently amended] The resist material of Claim 6 or 7 whose resin of (A) component is resin which has a substituent which changes the solubility to alkaline developing solution by cutting | disconnecting C-O-C bond by action of an acid.
[10" claim-type="Currently amended] The resin of component (A) is substituted with the ratio of the average of more than 0 mol% and 80 mol% or less of the whole hydrogen atom of a phenolic hydroxyl group by 1 type, or 2 or more types of acid labile groups of the hydrogen atom of a phenolic hydroxyl group. A resist material which is a high molecular weight compound having a weight average molecular weight of 3,000 to 100,000.
[11" claim-type="Currently amended] 10. The polymer compound according to claim 9, wherein the resin of component (A) has a repeating unit represented by the following general formula (2a), wherein a part of hydrogen atoms of the phenolic hydroxyl group in the polymer compound is selected from one or two or more acid labile groups. A polymer compound having a weight average molecular weight of 3,000 to 100,000, wherein the unit containing an acid labile group is substituted at a ratio of more than 0 mol% and 80 mol% or less with respect to the entire resin of the component (A). Resist material.
<Formula 2a>

In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, x is 0 or a positive integer, y is a positive integer, and x + It is a number which satisfy | fills y <= ⁵ , R <^6> represents an acid labile group, S and T represent a positive integer, and it is a number which satisfy | fills 0 <T / (S + T) <= 0.8.
[12" claim-type="Currently amended] 10. The polymer compound according to claim 9, wherein the resin of component (A) is a polymer compound having a repeating unit represented by the following formula (2aa), wherein a unit based on acrylate ester and methacrylic acid ester in the polymer compound is a repetition of the resin of component (A). The ratio of the average of 0 mol% or more and 50 mol% or less with respect to the whole unit, and the unit containing an acid labile group with respect to the whole repeating unit of resin of (A) component are more than 0 mol% and 80 mol% or less on average A resist material which is a high molecular weight compound having a weight average molecular weight of 3,000 to 100,000 substituted with.
<Formula 2aa>

In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, R ⁶ represents an acid labile group, and R ^6a is a hydrogen atom or an acid labile group, At least a portion is an acid labile, x is zero or a positive integer, y is a positive integer, a number satisfying x + y ≦ 5, M, N is a positive integer, and L is 0 or a positive integer And 0 <N / (M + N + L) ≦ 0.5 and 0 <(N + L) / (M + N + L) ≦ 0.8.
[13" claim-type="Currently amended] The polymer of claim 9, wherein the resin of component (A) is a polymer compound having a repeating unit represented by the following formula (2ab), wherein a unit based on indene and / or substituted indene in the polymer compound is a repetition of the resin of component (A). The ratio of the average of 0 mol% or more and 50 mol% or less with respect to the whole unit, and the unit containing an acid labile group with respect to the whole repeating unit of resin of (A) component are more than 0 mol% and 80 mol% or less on average A resist material which is a high molecular weight compound having a weight average molecular weight of 3,000 to 100,000 substituted with.
<Formula 2ab>

In the formula, R ⁴ represents a hydrogen atom or a methyl group, R ⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms, R ⁶ represents an acid labile group, and R ^6a is a hydrogen atom or an acid labile group, At least a portion is an acid labile, x is zero or a positive integer, y is a positive integer, a number satisfying x + y≤5, yy is 0 or a positive integer, and satisfies x + yy≤4 A, B are positive integers, C, D, E are zero or positive integers, 0 <(B + E) / (A + B + C + D + E) ≤0.5 and 0 < It is a number satisfying (C + D + E) / (A + B + C + D + E) ≦ 0.8.
[14" claim-type="Currently amended] According to any one of claims 10 to 13, wherein the acid labile group is a group represented by the following formula 4-7, a C4-20 tertiary alkyl group, trialkylsilyl group having 1 to 6 carbon atoms each, The resist material which is a C4-C20 oxoalkyl group or a C7-C20 aryl group substituted alkyl group.
<Formula 4>

<Formula 5>

<Formula 6>

<Formula 7>

In the formula, R ¹⁰ and R ¹¹ represent a hydrogen atom or a linear, branched or cyclic alkyl group having 1 to 18 carbon atoms, R ¹² represents a monovalent hydrocarbon group which may have a hetero atom having 1 to 18 carbon atoms, and R ¹⁰ And R ¹¹ , R ¹⁰ and R ¹² , R ¹¹ and R ¹² may form a ring, and in the case of forming a ring, R ¹⁰ , R ¹¹ and R ¹² may each be linear or branched having 1 to 18 carbon atoms. An alkylene group,
R ¹³ is a C4-20 tertiary alkyl group, each alkyl group is a trialkylsilyl group having 1 to 6 carbon atoms, an oxoalkyl group having 4 to 20 carbon atoms, or a group represented by Formula 4, and z is an integer of 0 to 6 ego,
R ¹⁴ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an aryl group which may be substituted with 6 to 20 carbon atoms, h is 0 or 1, i is any one of 0, 1, 2, 3 , 2h + i = 2 or 3,
R ¹⁵ represents a linear, branched or cyclic alkyl group having 1 to 8 carbon atoms or an optionally substituted aryl group having 6 to 20 carbon atoms, and R ¹⁶ to R ²⁵ each independently represent a hydrogen atom or a hetero atom having 1 to 15 carbon atoms. It represents the monovalent hydrocarbon group which may be included, and R <^16> -R <^25> may form a ring with each other, In that case, it shows the bivalent hydrocarbon group which may contain a C1-C15 hetero atom, and also R <^16> -R ²⁵ is a thing which couple | bonds with adjacent carbon, and couple | bonds without intervening and may form a double bond.
[15" claim-type="Currently amended] (D) The resist material of Claim 6 or 7 further mix | blended a basic compound.
[16" claim-type="Currently amended] The resist material according to claim 6 or 7, further comprising (E) an organic acid derivative.
[17" claim-type="Currently amended] The resist material of Claim 6 or 7 containing a propylene glycol alkyl ether acetate and / or lactic acid alkyl ester as a component of a solvent.
[18" claim-type="Currently amended] (i) applying the resist material according to any one of claims 6 to 17 on a substrate,
(ii) subsequent heat treatment followed by exposure to high energy or electron beams having a wavelength of 300 nm or less through a photomask;
(iii) process of developing using a developing solution after heat treatment as necessary;
Pattern forming method comprising a.

类似技术:

---

公开号 | 公开日 | 专利标题

---

KR101277435B1|2013-06-20|Method for forming resist pattern

---

US8030515B2|2011-10-04|Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process

---

US7569326B2|2009-08-04|Sulfonium salt having polymerizable anion, polymer, resist composition, and patterning process

---

KR101242332B1|2013-03-12|Resist Composition and Patterning Process

---

US7569324B2|2009-08-04|Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process

---

TWI421235B|2014-01-01|Novel photoacid generators, resist compositions, and patterning process

---

US8057985B2|2011-11-15|Polymerizable anion-containing sulfonium salt and polymer, resist composition, and patterning process

---

JP5183903B2|2013-04-17|Polymer compound, resist material, and pattern forming method using the same

---

US7670751B2|2010-03-02|Photoacid generator, resist composition, and patterning process

---

EP1077391B1|2006-09-27|Onium salts, photoacid generators for resist compositions, and patterning process

---

KR101162798B1|2012-07-05|Resist composition and patterning process using the same

---

TWI429663B|2014-03-11|Positive resist composition and patterning process

---

US8114570B2|2012-02-14|Photoacid generator, resist composition, and patterning process

---

JP4678383B2|2011-04-27|Chemically amplified negative resist composition and pattern forming method

---

US8114571B2|2012-02-14|Photoacid generator, resist composition, and patterning process

---

US6593056B2|2003-07-15|Chemically amplified positive resist composition and patterning method

---

TWI317047B|2009-11-11|

---

TWI439805B|2014-06-01|Positive resist composition and patterning process

---

US6746817B2|2004-06-08|Resist composition and patterning process

---

US6861198B2|2005-03-01|Negative resist material and pattern formation method using the same

---

JP4288518B2|2009-07-01|Lactone-containing compound, polymer compound, resist material, and pattern forming method

---

US7556909B2|2009-07-07|Sulfonate salts and derivatives, photoacid generators, resist compositions, and patterning process

---

US8039198B2|2011-10-18|Sulfonium salt-containing polymer, resist composition, and patterning process

---

KR101254365B1|2013-04-12|Fluorinated Monomer, Fluorinated Polymer, Resist Composition and Patterning Process

---

KR101280692B1|2013-07-01|Fluoroalcohol Preparation Method, Fluorinated Monomer, Polymer, Resist Composition and Patterning Process

同族专利:

---

公开号 | 公开日

---

TW200403523A|2004-03-01|

---

US20030215738A1|2003-11-20|

---

KR100698444B1|2007-03-23|

---

TWI317047B|2009-11-11|

---

US6916591B2|2005-07-12|

引用文献:

---

公开号 | 申请日 | 公开日 | 申请人 | 专利标题

---

法律状态:
2002-03-22|Priority to JP2002080649

---

2002-03-22|Priority to JPJP-P-2002-00080649

---

2003-03-21|Application filed by 신에쓰 가가꾸 고교 가부시끼가이샤

---

2004-01-07|Publication of KR20040002467A

---

2007-03-23|Application granted

---

2007-03-23|Publication of KR100698444B1

优先权:

---

申请号 | 申请日 | 专利标题

---

JP2002080649|2002-03-22|

---

JPJP-P-2002-00080649|2002-03-22|